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BAR61E6327

Description
Pin Diode, 100V V(BR), Silicon,
CategoryDiscrete semiconductor    diode   
File Size838KB,7 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance  
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BAR61E6327 Overview

Pin Diode, 100V V(BR), Silicon,

BAR61E6327 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionR-PDSO-G4
Reach Compliance Codecompliant
ECCN codeEAR99
applicationATTENUATOR; SWITCHING
Minimum breakdown voltage100 V
Shell connectionANODE AND CATHODE
ConfigurationCOMPLEX
Maximum diode capacitance0.5 pF
Nominal diode capacitance0.2 pF
Diode component materialsSILICON
Maximum diode forward resistance4200 Ω
Diode resistance test current0.01 mA
Diode resistance test frequency100 MHz
Diode typePIN DIODE
frequency bandHIGH FREQUENCY
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Minority carrier nominal lifetime1 µs
Humidity sensitivity level1
Number of components3
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.25 W
Certification statusNot Qualified
Reverse test voltage
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
Base Number Matches1
BAR1.../BAR61...
Silicon PIN Diode
RF switch, RF attenuator for frequencies
above 10 MHz
Low distortion faktor
Long-term stability of electrical characteristics
Pb-free (RoHS compliant) package
Qualified according AEC Q101
BAR14-1
!
BAR15-1
!
BAR16-1
!
BAR61
"
, 
!
, !
,
, 
,
, 
,
, 
,




Type
BAR14-1
BAR15-1
BAR16-1
BAR61
Package
SOT23
SOT23
SOT23
SOT143
Configuration
series
common cathode
common anode
PI element
L
S
(nH)
1.8
1.8
1.8
2
Marking
L7s
L8s
L9s
61s
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Symbol
Parameter
Diode reverse voltage
Forward current
Total power dissipation
T
S
65°C
Junction temperature
Operating temperature range
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
1
For
Value
100
140
250
150
-55 ... 125
-55 ... 150
Unit
V
mA
mW
°C
V
R
I
F
P
tot
T
j
T
op
T
stg
Symbol
R
thJS
Value
340
Unit
K/W
calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
2007-04-19

BAR61E6327 Related Products

BAR61E6327 BAR15-1E6327 BAR14-1E6327 BAR16-1E6327
Description Pin Diode, 100V V(BR), Silicon, Pin Diode, 100V V(BR), Silicon, Pin Diode, 100V V(BR), Silicon, Pin Diode, 100V V(BR), Silicon,
Is it lead-free? Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to
package instruction R-PDSO-G4 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Reach Compliance Code compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99
application ATTENUATOR; SWITCHING ATTENUATOR; SWITCHING ATTENUATOR; SWITCHING ATTENUATOR; SWITCHING
Minimum breakdown voltage 100 V 100 V 100 V 100 V
Configuration COMPLEX COMMON CATHODE, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS
Maximum diode capacitance 0.5 pF 0.5 pF 0.5 pF 0.5 pF
Nominal diode capacitance 0.2 pF 0.2 pF 0.2 pF 0.2 pF
Diode component materials SILICON SILICON SILICON SILICON
Maximum diode forward resistance 4200 Ω 4200 Ω 4200 Ω 4200 Ω
Diode resistance test current 0.01 mA 0.01 mA 0.01 mA 0.01 mA
Diode resistance test frequency 100 MHz 100 MHz 100 MHz 100 MHz
Diode type PIN DIODE PIN DIODE PIN DIODE PIN DIODE
frequency band HIGH FREQUENCY HIGH FREQUENCY HIGH FREQUENCY HIGH FREQUENCY
JESD-30 code R-PDSO-G4 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3 e3 e3
Minority carrier nominal lifetime 1 µs 1 µs 1 µs 1 µs
Humidity sensitivity level 1 1 1 1
Number of components 3 2 2 2
Number of terminals 4 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260 260
Maximum power dissipation 0.25 W 0.25 W 0.25 W 0.25 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES
Terminal surface MATTE TIN Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 40 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1 1 1
Maker - Infineon Infineon Infineon
Other features - LOW DISTORTION LOW DISTORTION LOW DISTORTION

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