BAR16-1E6327 datasheet, PDF - EEWORLD Datasheet

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BAR16-1E6327: DescriptionPin Diode, 100V V(BR), Silicon,; CategoryDiscrete semiconductor diode; File Size838KB，7 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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BAR16-1E6327 Overview

Pin Diode, 100V V(BR), Silicon,

BAR16-1E6327 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	R-PDSO-G3
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOW DISTORTION
application	ATTENUATOR; SWITCHING
Minimum breakdown voltage	100 V
Configuration	COMMON ANODE, 2 ELEMENTS
Maximum diode capacitance	0.5 pF
Nominal diode capacitance	0.2 pF
Diode component materials	SILICON
Maximum diode forward resistance	4200 Ω
Diode resistance test current	0.01 mA
Diode resistance test frequency	100 MHz
Diode type	PIN DIODE
frequency band	HIGH FREQUENCY
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Minority carrier nominal lifetime	1 µs
Humidity sensitivity level	1
Number of components	2
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Maximum power dissipation	0.25 W
Certification status	Not Qualified
Reverse test voltage
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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BAR1.../BAR61...

Silicon PIN Diode

•

RF switch, RF attenuator for frequencies

above 10 MHz

•

Low distortion faktor

•

Long-term stability of electrical characteristics

•

Pb-free (RoHS compliant) package

•

Qualified according AEC Q101

BAR14-1

BAR15-1

BAR16-1

BAR61

, !

Type

BAR14-1

BAR15-1

BAR16-1

BAR61

Package

SOT23

SOT143

Configuration

series

common cathode

common anode

PI element

(nH)

1.8

Marking

L7s

L8s

L9s

61s

Maximum Ratings

= 25°C, unless otherwise specified

Symbol

Parameter

Diode reverse voltage

Forward current

Total power dissipation

≤

65°C

Junction temperature

Operating temperature range

Storage temperature

Thermal Resistance

Parameter

Junction - soldering point

For

Value

100

140

250

150

-55 ... 125

-55 ... 150

Unit

°C

tot

stg

Symbol

thJS

Value

≤

340

Unit

K/W

calculation of

thJA

please refer to Application Note Thermal Resistance

2007-04-19

BAR16-1E6327 Related Products

	BAR16-1E6327	BAR15-1E6327	BAR14-1E6327	BAR61E6327
Description	Pin Diode, 100V V(BR), Silicon,	Pin Diode, 100V V(BR), Silicon,	Pin Diode, 100V V(BR), Silicon,	Pin Diode, 100V V(BR), Silicon,
Is it lead-free?	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to
package instruction	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G4
Reach Compliance Code	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
application	ATTENUATOR; SWITCHING	ATTENUATOR; SWITCHING	ATTENUATOR; SWITCHING	ATTENUATOR; SWITCHING
Minimum breakdown voltage	100 V	100 V	100 V	100 V
Configuration	COMMON ANODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	COMPLEX
Maximum diode capacitance	0.5 pF	0.5 pF	0.5 pF	0.5 pF
Nominal diode capacitance	0.2 pF	0.2 pF	0.2 pF	0.2 pF
Diode component materials	SILICON	SILICON	SILICON	SILICON
Maximum diode forward resistance	4200 Ω	4200 Ω	4200 Ω	4200 Ω
Diode resistance test current	0.01 mA	0.01 mA	0.01 mA	0.01 mA
Diode resistance test frequency	100 MHz	100 MHz	100 MHz	100 MHz
Diode type	PIN DIODE	PIN DIODE	PIN DIODE	PIN DIODE
frequency band	HIGH FREQUENCY	HIGH FREQUENCY	HIGH FREQUENCY	HIGH FREQUENCY
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G4
JESD-609 code	e3	e3	e3	e3
Minority carrier nominal lifetime	1 µs	1 µs	1 µs	1 µs
Humidity sensitivity level	1	1	1	1
Number of components	2	2	2	3
Number of terminals	3	3	3	4
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260	260	260
Maximum power dissipation	0.25 W	0.25 W	0.25 W	0.25 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	MATTE TIN
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	40
Base Number Matches	1	1	1	1
Maker	Infineon	Infineon	Infineon	-
Other features	LOW DISTORTION	LOW DISTORTION	LOW DISTORTION	-

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