US2884 datasheet, PDF - EEWORLD Datasheet

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US2884: DescriptionBipolar Hall Switch - Very High Sensitivity; File Size517KB，11 Pages; ManufacturerMelexis; Websitehttps://www.melexis.com/zh

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US2884 Overview

Bipolar Hall Switch - Very High Sensitivity

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US2884

Bipolar Hall Switch – Very High Sensitivity

Features and Benefits

Wide operating voltage range from 3.5V to 24V

Very high magnetic sensitivity

CMOS technology

Chopper-stabilized amplifier stage

Low current consumption

Open drain output

Thin SOT23 3L RoHS Compliant package

Application Examples

Automotive, Consumer and Industrial

Solid-state switch

Brushless DC motor commutation

Speed detection

Linear position detection

Angular position detection

Proximity detection

Ordering Information

Part No.

US2884

Temperature Code

L (-40° to 150°C)

Package Code

SE (TSOT-3L)

1 Functional Diagram

2 General Description

The Melexis US2884 is a bipolar Hall-effect switch

designed in mixed signal CMOS technology.

The device integrates a voltage regulator, Hall

sensor with dynamic offset cancellation system,

Schmitt trigger and an open-drain output driver, all

in a single package.

Due to its wide operating voltage range and

temperature range it is particularly suitable for use

in automotive and BLDC motor applications.

The device is delivered in a Thin Small Outline

Transistor (TSOT) RoHS compliant 3-lead

package.

3901002884

Rev 004

Page 1 of 11

Data Sheet

Jan/06

US2884

Bipolar Hall Switch – Very High Sensitivity

Table of Contents

1 Functional Diagram ........................................................................................................ 1

2 General Description........................................................................................................ 1

3 Glossary of Terms .......................................................................................................... 3

4 Absolute Maximum Ratings ........................................................................................... 3

5 Pin Definitions and Descriptions................................................................................... 3

6 General Electrical Specifications .................................................................................. 4

7 Magnetic Specifications ................................................................................................. 4

8 Output Behaviour versus Magnetic Pole ...................................................................... 4

9 Detailed General Description ......................................................................................... 5

10 Unique Features............................................................................................................ 5

11 Performance Graphs .................................................................................................... 6

11.1 Magnetic parameters vs. T

.....................................................................................................................6

11.2 Magnetic parameters vs. V

...................................................................................................................6

11.3 V

DSon

vs. T

..............................................................................................................................................6

11.4 V

DSon

vs. V

............................................................................................................................................6

11.5 I

vs. T

..................................................................................................................................................6

11.6 I

vs. V

................................................................................................................................................6

11.7 I

OFF

vs. T

.................................................................................................................................................7

11.8 I

OFF

vs. V

...............................................................................................................................................7

12 Test Conditions............................................................................................................. 7

12.1 Supply Current .........................................................................................................................................7

12.2 Output Saturation Voltage .......................................................................................................................7

12.3 Output Leakage Current ..........................................................................................................................7

12.4 Magnetic Thresholds ...............................................................................................................................7

13 Application Information................................................................................................ 8

13.1 Typical Three-Wire Application Circuit ....................................................................................................8

13.2 Two-Wire Circuit ......................................................................................................................................8

13.3 Automotive and Harsh, Noisy Environments Three-Wire Circuit ............................................................8

14 Application Comments ................................................................................................. 8

15 Standard information regarding manufacturability of Melexis products with

different soldering processes........................................................................................... 9

16 ESD Precautions ........................................................................................................... 9

17 SE Package Information (TSOT23-3L)....................................................................... 10

18 Disclaimer.................................................................................................................... 11

3901002884

Rev 004

Page 2 of 11

Data Sheet

Jan/06

US2884

Bipolar Hall Switch – Very High Sensitivity

9 Detailed General Description

Based on mixed signal CMOS technology, Melexis US2884 is a Hall-effect device with very high magnetic

sensitivity. It allows using generic magnets, weak magnets or larger air gap.

The chopper-stabilized amplifier uses switched capacitor technique to suppress the offset generally observed

with Hall sensors and amplifiers. The CMOS technology makes this advanced technique possible and

contributes to smaller chip size and lower current consumption than bipolar technology. The small chip size is

also an important factor to minimize the effect of physical stress.

This combination results in more stable magnetic characteristics and enables faster and more precise design.

The wide operating voltage from 3.5V to 24V, wide operating temperature according to “L” specification and

low current consumption make this device especially suitable for automotive and BLDC motor applications.

The output signal is open-drain type. Such output allows simple connectivity with TTL or CMOS logic by using

a pull-up resistor tied between a pull-up voltage and the device output.

10 Unique Features

The US2884 exhibits bipolar magnetic switching characteristics. Therefore, it operates with both south and

north poles.

Typically, the device behaves as a latch with symmetric

operating and release switching points (B

=|B

|). This means

magnetic fields with equivalent strength and opposite direction

drive the output high and low.

Removing the magnetic field (B→0) keeps the output in its

previous state. This latching property defines the device as a

magnetic memory.

Latch characteristic

Depending on the magnetic switching points, the device may also behave as a unipolar positive switch (B

and B

strictly positive) or negative switch (B

and B

strictly negative). That is the output can be set high

and low by only using one magnetic pole. In such case, removing the magnetic field changes the output level.

Unipolar positive switch characteristic

Unipolar negative switch characteristic

In latch, positive or negative switch behaviour, a magnetic hysteresis B

HYST

keeps B

and B

separated by

a minimal value. This hysteresis prevents output oscillation near the switching point.

3901002884

Rev 004

Page 5 of 11

Data Sheet

Jan/06

US2884 Related Products

	US2884	US2884LSE
Description	Bipolar Hall Switch - Very High Sensitivity	Bipolar Hall Switch - Very High Sensitivity

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