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ST173C10CHJ3

Description
Silicon Controlled Rectifier, 330000mA I(T), 1000V V(DRM)
CategoryAnalog mixed-signal IC    Trigger device   
File Size189KB,10 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

ST173C10CHJ3 Overview

Silicon Controlled Rectifier, 330000mA I(T), 1000V V(DRM)

ST173C10CHJ3 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction,
Reach Compliance Codeunknown
Nominal circuit commutation break time30 µs
Critical rise rate of minimum off-state voltage30 V/us
Maximum DC gate trigger current200 mA
Maximum DC gate trigger voltage3 V
Maximum holding current600 mA
Maximum leakage current40 mA
On-state non-repetitive peak current4900 A
Maximum on-state voltage2.07 V
Maximum on-state current330000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Off-state repetitive peak voltage1000 V
Trigger device typeSCR
Base Number Matches1
Bulletin I25180 rev. B 04/00
ST173C..C SERIES
INVERTER GRADE THYRISTORS
Features
Metal case with ceramic insulator
International standard case TO-200AB (A-PUK)
All diffused design
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance
Hockey Puk Version
330A
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
case style TO-200AB (A-PUK)
Major Ratings and Characteristics
Parameters
I
T(AV)
@ T
hs
I
T(RMS)
@ T
hs
I
TSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
DRM
/V
RRM
t
q
range
T
J
ST173C..C
330
55
610
25
4680
4900
110
100
1000 to1200
15 to 30
- 40 to 125
Units
A
°C
A
°C
A
A
KA
2
s
KA
2
s
V
µs
°C
Document Number: 93666
www.vishay.com
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