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1S1885

Description
1 A, 100 V, SILICON, SIGNAL DIODE, DO-15
Categorysemiconductor    Discrete semiconductor   
File Size48KB,2 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
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1S1885 Overview

1 A, 100 V, SILICON, SIGNAL DIODE, DO-15

BL
FEATURES
GALAXY ELECTRICAL
1S1885(Z)
- - -1S1888(Z)
VOLTAGE RANGE: 100 --- 600 V
CURRENT: 1.0 A
DO - 15
PLASTIC SILICON RECTIFIER
Low cost
Diffused juncton
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO--15,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014 ounces,0.39 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
1S
1885
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
1S
1886
200
140
200
1.0
1S
1887
400
280
400
1S
1888
600
420
600
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
100
70
100
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
60.0
A
Maximum instantaneous forw ard voltage
@ 1.5 A
Maximum reverse current
at rated DC blocking voltage
Typical junction capacitance
Typical thermal resistance
@T
A
=25
@T
A
=100
(Note1)
(Note2)
V
F
I
R
C
J
R
θ
JA
T
J
T
STG
1.2
5.0
50.0
20
40
- 55---- + 150
- 55 ---- + 150
V
A
pF
/W
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
2. Thermal resistance f rom junction to ambient.
www.galaxycn.com
Document Number 0260016
BL
GALAXY ELECTRICAL
1.

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