64MD-50-711 datasheet, PDF - EEWORLD Datasheet

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64MD-50-711: DescriptionRambus DRAM, 4MX16, CMOS, PBGA74, BGA-74; Categorystorage; File Size3MB，66 Pages; ManufacturerRambus Inc

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64MD-50-711 Overview

Rambus DRAM, 4MX16, CMOS, PBGA74, BGA-74

64MD-50-711 Parametric

Parameter Name	Attribute value
Maker	Rambus Inc
Parts packaging code	BGA
package instruction	TFBGA,
Contacts	74
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
access mode	BLOCK ORIENTED PROTOCOL
Other features	SELF CONTAINED REFRESH
JESD-30 code	R-PBGA-B74
memory density	67108864 bit
Memory IC Type	RAMBUS DRAM
memory width	16
Number of functions	1
Number of ports	1
Number of terminals	74
word count	4194304 words
character code	4000000
Operating mode	SYNCHRONOUS
organize	4MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY
Certification status	Not Qualified
Maximum seat height	1.2 mm
self refresh	YES
Maximum supply voltage (Vsup)	2.63 V
Minimum supply voltage (Vsup)	2.37 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Terminal form	BALL
Terminal pitch	0.75 mm
Terminal location	BOTTOM
Base Number Matches	1

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Direct RDRAM

™

RAMBUS

Preliminary Information

64/72-Mbit (256Kx16/18x16d)

Overview

The Rambus Direct RDRAM™ is a general purpose

high-performance memory device suitable for use in a

broad range of applications including computer

memory, graphics, video, and any other application

where high bandwidth and low latency are required.

The 64/72-Mbit Direct Rambus DRAMs (RDRAM



)

are extremely high-speed CMOS DRAMs organized as

4M words by 16 or 18 bits. The use of Rambus

Signaling Level (RSL) technology permits 600MHz to

800MHz transfer rates while using conventional

system and board design technologies. Direct RDRAM

devices are capable of sustained data transfers at 1.25

ns per two bytes (10ns per sixteen bytes).

The architecture of the Direct RDRAMs allows the

highest sustained bandwidth for multiple, simulta-

neous randomly addressed memory transactions. The

separate control and data buses with independent row

and column control yield over 95% bus efficiency. The

Direct RDRAM's 16 banks support up to four simulta-

neous transactions.

System oriented features for mobile, graphics and large

memory systems include power management, byte

masking, and x18 organization. The two data bits in the

x18 organization are general and can be used for addi-

tional storage and bandwidth or for error correction.

Figure 1: Direct RDRAM CSP Package

The 64/72-Mbit Direct RDRAMs are offered in a CSP

horizontal package suitable for desktop as well as low-

profile add-in card and mobile applications.

Key Timing Parameters/Part Numbers

Organization

256Kx16x16d

I/O Freq. Core Access Time

MHz

(ns)

600

711

800

600

711

800

Part

Number

64MD-53-600

64MD-50-711

64MD-45-711

64MD-45-800

64MD-40-800

72MD-53-600

72MD-50-711

72MD-45-711

72MD-45-800

72MD-40-800

Features

Highest sustained bandwidth per DRAM device

- 1.6GB/s sustained data transfer rate

- Separate control and data buses for maximized

efficiency

- Separate row and column control buses for

easy scheduling and highest performance

- 16 banks: four transactions can take place simul-

taneously at full bandwidth data rates

Low latency features

- Write buffer to reduce read latency

- 3 precharge mechanisms for controller flexibility

- Interleaved transactions

Advanced power management:

- Multiple low power states allows flexibility in

power consumption versus time to transition to

active state

- Power-down self-refresh

Organization: 1Kbyte pages and 16 banks, x 16/18

- x18 organization allows ECC configurations or

increased storage/bandwidth

- x16 organization for low cost applications

Uses Rambus Signaling Level (RSL) for up to

800MHz operation

256Kx16x16d

256Kx18x16d

a. The “16d” designation indicates that this RDRAM core is com-

posed of 16 banks which use a “doubled” bank architecture.

64MD-50-711 Related Products

	64MD-50-711	72MD-50-711	64MD-45-800	72MD-45-711	64MD-40-800	64MD-45-711	64MD-53-600	72MD-40-800	72MD-53-600	72MD-45-800
Description	Rambus DRAM, 4MX16, CMOS, PBGA74, BGA-74	Rambus DRAM, 4MX18, CMOS, PBGA54, CENTER BONDED, BGA-54	Rambus DRAM, 4MX16, 45ns, CMOS, PBGA74, BGA-74	Rambus DRAM, 4MX18, CMOS, PBGA54, CENTER BONDED, BGA-54	Rambus DRAM, 4MX16, 40ns, CMOS, PBGA74, BGA-74	Rambus DRAM, 4MX16, CMOS, PBGA74, BGA-74	Rambus DRAM, 4MX16, 53ns, CMOS, PBGA74, BGA-74	Rambus DRAM, 4MX18, 40ns, CMOS, PBGA54, CENTER BONDED, BGA-54	Rambus DRAM, 4MX18, 53ns, CMOS, PBGA54, CENTER BONDED, BGA-54	Rambus DRAM, 4MX18, 45ns, CMOS, PBGA54, CENTER BONDED, BGA-54
Maker	Rambus Inc	Rambus Inc	Rambus Inc	Rambus Inc	Rambus Inc	Rambus Inc	Rambus Inc	Rambus Inc	Rambus Inc	Rambus Inc
Parts packaging code	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA
Contacts	74	54	74	54	74	74	74	54	54	54
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL
JESD-30 code	R-PBGA-B74	R-PBGA-B54	R-PBGA-B74	R-PBGA-B54	R-PBGA-B74	R-PBGA-B74	R-PBGA-B74	R-PBGA-B54	R-PBGA-B54	R-PBGA-B54
memory density	67108864 bit	75497472 bit	67108864 bit	75497472 bit	67108864 bit	67108864 bit	67108864 bit	75497472 bit	75497472 bit	75497472 bi
Memory IC Type	RAMBUS DRAM	RAMBUS DRAM	RAMBUS DRAM	RAMBUS DRAM	RAMBUS DRAM	RAMBUS DRAM	RAMBUS DRAM	RAMBUS DRAM	RAMBUS DRAM	RAMBUS DRAM
memory width	16	18	16	18	16	16	16	18	18	18
Number of functions	1	1	1	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1	1	1	1
Number of terminals	74	54	74	54	74	74	74	54	54	54
word count	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words
character code	4000000	4000000	4000000	4000000	4000000	4000000	4000000	4000000	4000000	4000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
organize	4MX16	4MX18	4MX16	4MX18	4MX16	4MX16	4MX16	4MX18	4MX18	4MX18
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum supply voltage (Vsup)	2.63 V	2.63 V	2.63 V	2.63 V	2.63 V	2.63 V	2.63 V	2.63 V	2.63 V	2.63 V
Minimum supply voltage (Vsup)	2.37 V	2.37 V	2.37 V	2.37 V	2.37 V	2.37 V	2.37 V	2.37 V	2.37 V	2.37 V
Nominal supply voltage (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Terminal form	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum access time	-	-	45 ns	-	40 ns	-	53 ns	40 ns	53 ns	45 ns

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