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RM2

Description
1.2 A, 400 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size40KB,2 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
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RM2 Overview

1.2 A, 400 V, SILICON, RECTIFIER DIODE

RM2 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionAXIAL PACKAGE-2
stateACTIVE
packaging shaperound
Package SizeLONG FORM
Terminal formWire
terminal coatingtin lead
Terminal locationAXIAL
Packaging MaterialsPlastic/Epoxy
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typerectifier diode
applicationGENERAL PURPOSE
Phase1
Maximum repetitive peak reverse voltage400 V
Maximum average forward current1.2 A
Maximum non-repetitive peak forward current100 A
BL
FEATURES
Low cost
Low leakage
GALAXY ELECTRICAL
RM2Z(Z)---RM2C(Z)
VOLTAGE RANGE: 200 --- 1000 V
CURRENT: 1.2 A
PLASTIC SILICON RECTIFIER
DO - 15L
Diffused junction
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO--15L,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.017 ounces,0.48 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
RM2Z
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead lengths,
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
j
=125
@T
A
=75
RM2
400
280
400
RM2A
600
420
600
1.2
RM2B
800
560
800
RM2C
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
(AV)
200
140
200
I
FSM
100
A
Maximum instantaneous forw ard voltage
at 1.2 A
Maximum reverse current
at rated DC blocking voltage
Typical junction capacitance
Typical thermal resistance
@T
A
=25
@T
A
=100
(Note1)
(Note2)
V
F
I
R
C
J
R
θ
jA
T
j
T
STG
0.91
10.0
50
30
50
-
55
---- + 150
-
55
---- + 150
V
A
pF
Operating junction temperature range
Storage temperature range
2. Thermal resistance f rom junction to ambient.
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
www.galaxycn.com
Document Number 0260030
BL
GALAXY ELECTRICAL
1.

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