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EG01Z

Description
0.7 A, 200 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size55KB,2 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
Download Datasheet Parametric Compare View All

EG01Z Overview

0.7 A, 200 V, SILICON, SIGNAL DIODE

EG01Z Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionAXIAL PACKAGE-2
Lead-freeYes
EU RoHS regulationsYes
stateDISCONTINUED
packaging shaperound
Package SizeLONG FORM
Terminal formWire
terminal coatingMATTE Tin
Terminal locationAXIAL
Packaging MaterialsUNSPECIFIED
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typeSignal diode
Maximum reverse recovery time0.1000 us
Maximum repetitive peak reverse voltage200 V
Maximum average forward current0.7000 A
BL
FEATURES
GALAXY ELECTRICAL
EG01Y(Z)---EG01C(Z)
VOLTAGE RANGE: 70 --- 1000 V
CURRENT: 0.5 --- 1.0 A
HIGH EFFICIENCY RECTIFIER
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with freon, alcohol, lsopropand and
similar solvents
The plastic material carries U/L recognition 94v-0
DO - 41
MECHANICAL DATA
Case: JEDEC DO-41, molded plastic
Terminals: Axial leads,solderable per MIL-STD-202,
Method 208
Polarity: Color band denotes cathode
Weight: 0.012 ounces, 0.34grams
Mounting: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
EG01Y
Maximum peak repetitive reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
Peak forw ard surge current
10ms single half-sine-w ave
superimplsed on rated load
@T
J
=125
Maximum instantaneous forw ard voltage
@ I
F
=I
F(AV)
Maximum reverse current
at rated DC blocking voltage
Maximum reverse recovery time
Typical junction capacitance
Typical thermal resistance
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.5A
2. Measured at 1.0MH
Z
and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
EG01Z
200
140
200
0.7
EG01
400
280
400
EG01A
600
420
600
EG01C
1000
700
1000
0.5
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
70
49
70
1.0
@T
A
=75
I
FSM
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
30.0
15.0
10.0
A
1.2
0.1
0.5
1
.9
0.05
0.30
50
20
60
2.0
0.1
0.5
3.3
0.05
0.50
V
mA
ns
@T
A
=25
@T
A
=100
(Note1)
(Note2)
(Note3)
15
pF
/W
- 55 --- + 150
- 55 --- + 150
www.galaxycn.com
Document Number 0262026
BL
GALAXY ELECTRICAL
1.

EG01Z Related Products

EG01Z EG01 EG01A EG01Y EG01ZZ EG01CZ EG01C EG01YZ EG01AZ
Description 0.7 A, 200 V, SILICON, SIGNAL DIODE 0.7 A, 400 V, SILICON, SIGNAL DIODE 0.5 A, 600 V, SILICON, SIGNAL DIODE 1 A, 70 V, SILICON, SIGNAL DIODE 0.7 A, 400 V, SILICON, SIGNAL DIODE 0.7 A, 400 V, SILICON, SIGNAL DIODE 0.5 A, SILICON, SIGNAL DIODE 0.7 A, 400 V, SILICON, SIGNAL DIODE 0.7 A, 400 V, SILICON, SIGNAL DIODE
Number of terminals 2 2 - - 2 2 - 2 2
Number of components 1 1 - - 1 1 - 1 1
Processing package description AXIAL PACKAGE-2 AXIAL PACKAGE-2 - - AXIAL PACKAGE-2 AXIAL PACKAGE-2 - AXIAL PACKAGE-2 AXIAL PACKAGE-2
Lead-free Yes Yes - - Yes Yes - Yes Yes
EU RoHS regulations Yes Yes - - Yes Yes - Yes Yes
state DISCONTINUED ACTIVE - - ACTIVE ACTIVE - ACTIVE ACTIVE
packaging shape round round - - round round - round round
Package Size LONG FORM LONG FORM - - LONG FORM LONG FORM - LONG FORM LONG FORM
Terminal form Wire Wire - - Wire Wire - Wire Wire
terminal coating MATTE Tin MATTE Tin - - MATTE Tin MATTE Tin - MATTE Tin MATTE Tin
Terminal location AXIAL AXIAL - - AXIAL AXIAL - AXIAL AXIAL
Packaging Materials UNSPECIFIED UNSPECIFIED - - UNSPECIFIED UNSPECIFIED - UNSPECIFIED UNSPECIFIED
structure single single - - single single - single single
Shell connection isolation isolation - - isolation isolation - isolation isolation
Diode component materials silicon silicon - - silicon silicon - silicon silicon
Diode type Signal diode Signal diode - - Signal diode Signal diode - Signal diode Signal diode
Maximum reverse recovery time 0.1000 us 0.0500 us - - 0.0500 us 0.0500 us - 0.0500 us 0.0500 us
Maximum repetitive peak reverse voltage 200 V 400 V - - 400 V 400 V - 400 V 400 V
Maximum average forward current 0.7000 A 0.7000 A - - 0.7000 A 0.7000 A - 0.7000 A 0.7000 A
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