EG01C datasheet, PDF - EEWORLD Datasheet

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EG01C: Description0.5 A, SILICON, SIGNAL DIODE; Categorysemiconductor Discrete semiconductor; File Size55KB，2 Pages; ManufacturerBILIN; Websitehttp://www.galaxycn.com/

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EG01C Overview

0.5 A, SILICON, SIGNAL DIODE

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FEATURES

GALAXY ELECTRICAL

EG01Y(Z)---EG01C(Z)

VOLTAGE RANGE: 70 --- 1000 V

CURRENT: 0.5 --- 1.0 A

HIGH EFFICIENCY RECTIFIER

Low cost

Diffused junction

Low leakage

Low forward voltage drop

High current capability

Easily cleaned with freon, alcohol, lsopropand and

similar solvents

The plastic material carries U/L recognition 94v-0

DO - 41

MECHANICAL DATA

Case: JEDEC DO-41, molded plastic

Terminals: Axial leads,solderable per MIL-STD-202,

Method 208

Polarity: Color band denotes cathode

Weight: 0.012 ounces, 0.34grams

Mounting: Any

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

ambient temperature unless otherwise specified.

Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.

EG01Y

Maximum peak repetitive reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forw ard rectified current

9.5mm lead length,

Peak forw ard surge current

10ms single half-sine-w ave

superimplsed on rated load

=125

Maximum instantaneous forw ard voltage

@ I

F(AV)

Maximum reverse current

at rated DC blocking voltage

Maximum reverse recovery time

Typical junction capacitance

Typical thermal resistance

Operating junction temperature range

Storage temperature range

NOTE: 1. Measured with I

=0.5A, I

=1A, I

=0.5A

2. Measured at 1.0MH

and applied rev erse v oltage of 4.0V DC.

3. Thermal resistance f rom junction to ambient.

EG01Z

200

140

200

0.7

EG01

400

280

400

EG01A

600

420

600

EG01C

1000

700

1000

0.5

UNITS

RRM

RMS

F(AV)

1.0

=75

FSM

STG

30.0

15.0

10.0

1.2

0.1

0.5

0.05

0.30

2.0

0.1

0.5

3.3

0.05

0.50

=25

=100

(Note1)

(Note2)

(Note3)

- 55 --- + 150

www.galaxycn.com

Document Number 0262026

GALAXY ELECTRICAL

EG01C Related Products

	EG01C	EG01	EG01A	EG01Y	EG01Z	EG01ZZ	EG01CZ	EG01YZ	EG01AZ
Description	0.5 A, SILICON, SIGNAL DIODE	0.7 A, 400 V, SILICON, SIGNAL DIODE	0.5 A, 600 V, SILICON, SIGNAL DIODE	1 A, 70 V, SILICON, SIGNAL DIODE	0.7 A, 200 V, SILICON, SIGNAL DIODE	0.7 A, 400 V, SILICON, SIGNAL DIODE	0.7 A, 400 V, SILICON, SIGNAL DIODE	0.7 A, 400 V, SILICON, SIGNAL DIODE	0.7 A, 400 V, SILICON, SIGNAL DIODE
Number of terminals	-	2	-	-	2	2	2	2	2
Number of components	-	1	-	-	1	1	1	1	1
Processing package description	-	AXIAL PACKAGE-2	-	-	AXIAL PACKAGE-2	AXIAL PACKAGE-2	AXIAL PACKAGE-2	AXIAL PACKAGE-2	AXIAL PACKAGE-2
Lead-free	-	Yes	-	-	Yes	Yes	Yes	Yes	Yes
EU RoHS regulations	-	Yes	-	-	Yes	Yes	Yes	Yes	Yes
state	-	ACTIVE	-	-	DISCONTINUED	ACTIVE	ACTIVE	ACTIVE	ACTIVE
packaging shape	-	round	-	-	round	round	round	round	round
Package Size	-	LONG FORM	-	-	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Terminal form	-	Wire	-	-	Wire	Wire	Wire	Wire	Wire
terminal coating	-	MATTE Tin	-	-	MATTE Tin	MATTE Tin	MATTE Tin	MATTE Tin	MATTE Tin
Terminal location	-	AXIAL	-	-	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Packaging Materials	-	UNSPECIFIED	-	-	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
structure	-	single	-	-	single	single	single	single	single
Shell connection	-	isolation	-	-	isolation	isolation	isolation	isolation	isolation
Diode component materials	-	silicon	-	-	silicon	silicon	silicon	silicon	silicon
Diode type	-	Signal diode	-	-	Signal diode	Signal diode	Signal diode	Signal diode	Signal diode
Maximum reverse recovery time	-	0.0500 us	-	-	0.1000 us	0.0500 us	0.0500 us	0.0500 us	0.0500 us
Maximum repetitive peak reverse voltage	-	400 V	-	-	200 V	400 V	400 V	400 V	400 V
Maximum average forward current	-	0.7000 A	-	-	0.7000 A	0.7000 A	0.7000 A	0.7000 A	0.7000 A

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