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EU01Z

Description
0.25 A, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size55KB,2 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
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EU01Z Overview

0.25 A, SILICON, SIGNAL DIODE

BL
FEATURES
GALAXY ELECTRICAL
EU01Z(Z) - - - EU01A(Z)
VOLTAGE RANGE: 200--- 600 V
CURRENT: 0.25A
HIGH EFFICIENCY RECTIFIER
Low cos t
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with freon, Alcohol, lsopropand and
sim ilar solvents
DO - 41
MECHANICAL DATA
Case: JEDEC DO-41, molded plastic
Term inals: Axial leads,solderable per MIL-STD-202,
Method 208
Polarity: Color band denotes cathode
Weight: 0.012 ounces, 0.34 grams
Mounting: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient tem perature unless otherwis e specified.
Single phas e,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
EU01Z
Maximum peak repetitive reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average f orw ard rectified current
9.5mm lead length
Peak forw ard surge current
10ms single half-sine-w ave
superimplsed on rated load
@T
J
=125
Maximum instantaneous forw ard voltage
@ 0.25A
Maximum reverse current
@T
A
=25
@T
A
=75
EU01
400
280
400
0.25
EU01A
600
420
600
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
200
140
200
I
FSM
V
F
I
R
t
rr
C
J
R
θ
JL
T
J
T
STG
20
15.0
A
2.5
10.0
V
A
at Rated DC blocking voltage @T
A
=100
Maximum reverse recovery time
Typical junction capacitance
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MH
Z
and applied rev erse of 4.0V DC.
3. Themal resistance f rom junction to ambient.
150.0
100
15
20
- 55 ----- + 150
- 55 ----- + 150
www.galaxycn.com
(Note1)
(Note2)
(Note3)
ns
pF
/W
Document Number 0262032
BL
GALAXY ELECTRICAL
1.

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Description 0.25 A, SILICON, SIGNAL DIODE 0.25 A, SILICON, SIGNAL DIODE 0.25 A, SILICON, SIGNAL DIODE

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