BL
FEATURES
Low cost
GALAXY ELECTRICAL
RU4Y(Z) --- RU4YX(Z)
VOLTAGE RANGE: 100 --- 1000 V
CURRENT: 2.5 -- 4.0 A
HIGH EFFICIENCY ECTIFIERS
DO - 27
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO--27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041 ounces,1.15 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
RU4Y
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
Maximum instantaneous forw ard voltage
@ I
F
=I
F(AV)
Maximum reverse current
@T
A
=25
(Note1)
(Note2)
(Note3)
at rated DC blocking voltage @T
A
=100
Maximum reverse recovery time
Typical junction capacitance
Typical thermal resistance
@T
A
=75
RU4Z
200
140
200
RU4
400
280
400
RU4A
600
420
600
3.0
RU4B
800
560
800
RU4C
1000
700
1000
2.5
RU4YX UNITS
100
70
100
4.0
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
100
70
100
3.5
I
FSM
V
F
I
R
t
rr
C
J
R
θJL
T
J
T
STG
70.0
50.0
100.0
A
1.3
10.0
300.0
1.5
1.6
50.0
500.0
0.85
10.0
4)
V
A
ns
pF
／Ｗ
300.0
50
100
70
8
- 55 ----- + 150
- 55 ----- + 150
50
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
www.galaxycn.com
2. Measured at 1.0MH
Z
and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
4.I
F(AV)
=2.0A
Document Number 0262048
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
RU4Y(Z)---RU4YX(Z)
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
N 1.
10
N 1.
t
rr
+0.5A
D.U.T.
(+)
25VDC
(approx)
(-)
1
NONIN-
DUCTIVE
(-)
PULSE
GENERATOR
(NOTE2)
OSCILLOSCOPE
(NOTE 1)
(-)
0
-0.25A
-1 .0A
1cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF.
JJJJ
2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 .
SET TIME BASE FOR 10/20 ns/cm
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
100
RU4YX
10
RU4Y,RU4Z
FIG.3 -- FORWARD DERATING CURVE
AVERAGE FORWARD RECTIFIED CURRENT
AMPERES
INSTANTANEOUS FORWARD CURRENT
4.0
RU4YX
RU4,RU4A,RU4B
RU4C
3.0
RU4B
1.0
RU4Y,RU4Z
2.0
AMPERES
RU4,RU4A
0.1
0.04
T
J
=25
Pulse Width=300
µ
S
0.01
0
0.2 0.4 0.6 0.8
1
1.2 1.4
1.6
1.8 2
RU4C
1.0
Single Phase
Half W 60Hz
ave
Resistive or
Inductive Load
0
0
25
50
75
100
125
150
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
AMBIENT TEMPERATURE,
FIG.4 -- PEAK FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT
FIG.5--TYPICAL JUNCTION CAPACITANCE
90
80
70
60
RU4YX
T
J
=25
8.3ms Single Half
Sine-Wave
JUNCTION CAPACITANCE,pF
100
200
AMPERES
50
40
30
20
10
0
1
5
RU4,RU4A,
RU4B,RU4C
RU4Y,RU4Z,RU4
100
70
50
T
J
=25
20
10
0.1 0.2
0.4
1
2
RU4Y,RU4Z
RU4A,RU4B,
RU4C,RU4YX
4
10
20
40
100
10
50
NUMBER OF CYCLES AT 60Hz
REVERSE VOLTAGE,VOLTS
www.galaxycn.com
Document Number 0262048
BL
GALAXY ELECTRICAL
2.
Embedded System
京公网安备 11010802033920号
EEWORLD
