EEWORLDEEWORLDEEWORLD

Part Number

Search

RU4Y

Description
3.5 A, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size84KB,2 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
Download Datasheet Compare View All

RU4Y Overview

3.5 A, SILICON, RECTIFIER DIODE

BL
FEATURES
Low cost
GALAXY ELECTRICAL
RU4Y(Z) --- RU4YX(Z)
VOLTAGE RANGE: 100 --- 1000 V
CURRENT: 2.5 -- 4.0 A
HIGH EFFICIENCY ECTIFIERS
DO - 27
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO--27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041 ounces,1.15 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
RU4Y
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
Maximum instantaneous forw ard voltage
@ I
F
=I
F(AV)
Maximum reverse current
@T
A
=25
(Note1)
(Note2)
(Note3)
at rated DC blocking voltage @T
A
=100
Maximum reverse recovery time
Typical junction capacitance
Typical thermal resistance
@T
A
=75
RU4Z
200
140
200
RU4
400
280
400
RU4A
600
420
600
3.0
RU4B
800
560
800
RU4C
1000
700
1000
2.5
RU4YX UNITS
100
70
100
4.0
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
100
70
100
3.5
I
FSM
V
F
I
R
t
rr
C
J
R
θJL
T
J
T
STG
70.0
50.0
100.0
A
1.3
10.0
300.0
1.5
1.6
50.0
500.0
0.85
10.0
4)
V
A
ns
pF
/W
300.0
50
100
70
8
- 55 ----- + 150
- 55 ----- + 150
50
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
www.galaxycn.com
2. Measured at 1.0MH
Z
and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
4.I
F(AV)
=2.0A
Document Number 0262048
BL
GALAXY ELECTRICAL
1.

RU4Y Related Products

RU4Y RU4Z RU4 RU4A
Description 3.5 A, SILICON, RECTIFIER DIODE 2 A, 200 V, SILICON, RECTIFIER DIODE 3 A, SILICON, RECTIFIER DIODE 3 A, SILICON, RECTIFIER DIODE

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2215  2000  274  1142  1705  45  41  6  23  35 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号