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MBR1645

Description
16 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AC
Categorysemiconductor    Discrete semiconductor   
File Size59KB,2 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
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MBR1645 Overview

16 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AC

MBR1645 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPLASTIC PACKAGE-2
stateACTIVE
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structuresingle
Shell connectionCATHODE
Diode component materialssilicon
Diode typerectifier diode
applicationEFFICIENCY
Phase1
Maximum repetitive peak reverse voltage45 V
Maximum average forward current16 A
Maximum non-repetitive peak forward current150 A
BL
FEATURES
GALAXY ELECTRICAL
MBR1635 - - - MBR1660
VOLTAGE RANGE: 35 --- 60 V
CURRENT: 16.0 A
SCHOTTKY BARRIER RECTIFIER
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop,Low switching losses
High surge capability
For use in low voltage,high frequency inverters free
xxxx
wheeling,and polarity protection applications
The plastic material carries U/L recognition 94V-0
TO-220AC
MECHANICAL DATA
Case:JEDEC TO-220AC,molded plastic
Terminals: Leads solderable per
MIL- STD-750,Method 2026
Polarity: As marked
Weight:
0.064 ounce, 1.81 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
MBR1635
MBR1640 MBR1645
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
@T
A
=133
Peak repetitive forw ard current at T
C
=125
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous
forward voltage at (Note 1)
Maximum reverse current
at rated DC blocking voltage
Typical thermal resistance
@T
J
=125
I
F
=16A,T
C
=25℃
I
F
=16A,T
C
=125℃
@T
A
=25
@T
A
=125
(Note2)
MBR1650
50
35
50
MBR1660
UNITS
60
42
60
V
V
V
A
A
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
I
FSM
35
25
35
40
28
40
45
32
45
16.0
32.0
150
0.63
0.57
0.2
40.0
1.5
-65 --- +125
-65 --- +150
0.75
0.65
1.0
50.0
A
V
F
I
R
R
θ
JC
T
J
T
STG
V
mA
℃/W
www.galaxycn.com
Operating junction temperature range
Storage temperature range
NOTE: 1. Pulse test : 300
μ
s pulse width,1% duty cy cle.
2.Thermal resistance junction to case
Document Number 0266017
BL
GALAXY ELECTRICAL
1
.

MBR1645 Related Products

MBR1645 MBR1635 MBR1650 MBR1640 MBR1660
Description 16 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AC 16 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC 16 A, 50 V, SILICON, RECTIFIER DIODE 16 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AC 16 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AC

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