BL
FEATURES
GALAXY ELECTRICAL
MBR1635 - - - MBR1660
VOLTAGE RANGE: 35 --- 60 V
CURRENT: 16.0 A
SCHOTTKY BARRIER RECTIFIER
◇
Metal-Semiconductor junction with guard ring
◇
Epitaxial construction
◇
Low forward voltage drop,Low switching losses
◇
High surge capability
◇
For use in low voltage,high frequency inverters free
xxxx
wheeling,and polarity protection applications
◇
The plastic material carries U/L recognition 94V-0
TO-220AC
MECHANICAL DATA
◇
Case:JEDEC TO-220AC,molded plastic
◇
Terminals: Leads solderable per
MIL- STD-750,Method 2026
◇
Polarity: As marked
◇
Weight:
0.064 ounce, 1.81 grams
◇
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
℃
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
MBR1635
MBR1640 MBR1645
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
@T
A
=133
℃
Peak repetitive forw ard current at T
C
=125
℃
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous
forward voltage at (Note 1)
Maximum reverse current
at rated DC blocking voltage
Typical thermal resistance
@T
J
=125
℃
I
F
=16A,T
C
=25℃
I
F
=16A,T
C
=125℃
@T
A
=25
℃
@T
A
=125
℃
(Note2)
MBR1650
50
35
50
MBR1660
UNITS
60
42
60
V
V
V
A
A
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
I
FSM
35
25
35
40
28
40
45
32
45
16.0
32.0
150
0.63
0.57
0.2
40.0
1.5
-65 --- +125
-65 --- +150
0.75
0.65
1.0
50.0
A
V
F
I
R
R
θ
JC
T
J
T
STG
V
mA
℃/W
℃
℃
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Operating junction temperature range
Storage temperature range
NOTE: 1. Pulse test : 300
μ
s pulse width,1% duty cy cle.
2.Thermal resistance junction to case
Document Number 0266017
BL
GALAXY ELECTRICAL
1
.
RATINGS AND CHARACTERISTIC CURVES
FIG.1 -- FORWARD CURRENT DERATING CURVE
PEAK FORWARD SURGE CURRENT
AMPERES
AVERAGE FORWARD RECTIFIED
CURRENT,AMPERES
MBR1635 - - - MBR1660
FIG.2 --MAXIMUM NON-REPETITIVE
FORWARD SURGE CURRENT
150
TJ=TJ max.
8.3ms SINGLE HALF SINE-WAVE
20
Resistive or Inductive Load
125
16
12
8
4
0
0
50
100
150
100
75
50
25
0
1
10
100
AMBIENT TEMPERATURE,
℃
NUMBER OF CYCLES AT 60Hz
FIG.4--TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE LEAKAGE
CURRENT, MILLIAMPERES
FIG.3 --TYPICAL INSTANTANEOUS
INSTANTANEOUS FORWARD CURRENT
FORWARD CHARACTERISTICS
50
50
10
MBR1635-MBR1645
MBR1650-MBR1660
10
T
J
=125
℃
Pulse width=300
μ
s
1% Duty Cycle
TJ=125
℃
1
AMPERES
T
J
=25
℃
1
TJ=75
℃
0.1
0.1
0.01
TJ=25
℃
MBR1635-MBR1645
MBR1650-MBR1660
0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0.001
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
TRANSIENT THERMAL IMPEDANCE ,
℃
/W
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5--TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE,pF
FIG.6--TYPICAL TRANSIENT THERMAL IMPEDANCE
100
4,000
TJ=25
℃
f=1.0MHz
Vsig=50mVp-p
1,000
10
1
MBR1635-MBR1645
100
MBR1650-MBR1660
0.1
1
10
100
0.1
0.01
0.1
1
10
100
REVERSE VOLTAGE,VOLTS
PULSE DURATION,Sec
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Document Number 0266017
BL
GALAXY ELECTRICAL
2.
Embedded System
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