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CY7C1386C-167BGI

Description
Cache SRAM, 512KX36, 3.4ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119
Categorystorage    storage   
File Size569KB,34 Pages
ManufacturerCypress Semiconductor
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CY7C1386C-167BGI Overview

Cache SRAM, 512KX36, 3.4ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119

CY7C1386C-167BGI Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeBGA
package instruction14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119
Contacts119
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Maximum access time3.4 ns
Other featuresPIPELINED ARCHITECTURE
Maximum clock frequency (fCLK)167 MHz
I/O typeCOMMON
JESD-30 codeR-PBGA-B119
length22 mm
memory density18874368 bit
Memory IC TypeCACHE SRAM
memory width36
Humidity sensitivity level1
Number of functions1
Number of terminals119
word count524288 words
character code512000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize512KX36
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Encapsulate equivalent codeBGA119,7X17,50
Package shapeRECTANGULAR
Package formGRID ARRAY
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
power supply2.5/3.3,3.3 V
Certification statusNot Qualified
Maximum seat height2.4 mm
Maximum standby current0.06 A
Minimum standby current3.14 V
Maximum slew rate0.275 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch1.27 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width14 mm
Base Number Matches1
CY7C1386C
CY7C1387C
18-Mb (512K x 36/1M x 18) Pipelined DCD
Sync SRAM
Features
• Supports bus operation up to 250 MHz
• Available speed grades are 250, 225, 200 and 167 MHz
• Registered inputs and outputs for pipelined operation
• Optimal for performance (Double-Cycle deselect)
• Depth expansion without wait state
• 3.3V –5% and +10% core power supply (V
DD
)
• 2.5V / 3.3V I/O operation
• Fast clock-to-output times
— 2.6 ns (for 250-MHz device)
— 2.8 ns (for 225-MHz device)
— 3.0 ns (for 200-MHz device)
— 3.4 ns (for 167-MHz device)
• Provide high-performance 3-1-1-1 access rate
User-selectable burst counter supporting Intel
Pentium interleaved or linear burst sequences
• Separate processor and controller address strobes
• Synchronous self-timed writes
• Asynchronous output enable
• Offered in JEDEC-standard 100-pin TQFP, 119-ball BGA
and 165-Ball fBGA packages
• IEEE 1149.1 JTAG-Compatible Boundary Scan
• “ZZ” Sleep Mode Option
Functional Description
[1]
The CY7C1386C/CY7C1387C SRAM integrates 524,288 x 36
and 1048,576 x 18 SRAM cells with advanced synchronous
peripheral circuitry and a two-bit counter for internal burst
operation. All synchronous inputs are gated by registers
controlled by a positive-edge-triggered Clock Input (CLK). The
synchronous inputs include all addresses, all data inputs,
address-pipelining Chip Enable (CE
1
), depth-expansion Chip
Enables (CE
2
and CE
3[2]
), Burst Control inputs (ADSC, ADSP,
and ADV), Write Enables (BW
X
, and BWE), and Global Write
(GW). Asynchronous inputs include the Output Enable (OE)
and the ZZ pin.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (ADV).
Address, data inputs, and write controls are registered on-chip
to initiate a self-timed Write cycle.This part supports Byte Write
operations (see Pin Descriptions and Truth Table for further
details). Write cycles can be one to four bytes wide as
controlled by the byte write control inputs. GW active LOW
causes all bytes to be written. This device incorporates an
additional pipelined enable register which delays turning off
the output buffers an additional cycle when a deselect is
executed.This feature allows depth expansion without penal-
izing system performance.
The CY7C1386C/CY7C1387C operates from a +3.3V core
power supply while all outputs operate with a +3.3V or a +2.5V
supply. All inputs and outputs are JEDEC-standard
JESD8-5-compatible.
Selection Guide
250 MHz
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
2.6
350
70
225 MHz
2.8
325
70
200 MHz
3.0
300
70
167 MHz
3.4
275
70
Unit
ns
mA
mA
Shaded areas contain advance information.
Please contact your local Cypress sales representative for availability of these parts.
Notes:
1. For best–practices recommendations, please refer to the Cypress application note
System Design Guidelines
on www.cypress.com.
2. CE
3
and CE
2
are for TQFP and 165 fBGA package only. 119 BGA is offered only in Single Chip Enable.
Cypress Semiconductor Corporation
Document #: 38-05239 Rev. *B
3901 North First Street
San Jose
,
CA 95134
408-943-2600
Revised February 26, 2004

CY7C1386C-167BGI Related Products

CY7C1386C-167BGI CY7C1387C-167BZI CY7C1387D-200AXCT CY7C1387C-167BZC
Description Cache SRAM, 512KX36, 3.4ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119 Cache SRAM, 1MX18, 3.4ns, CMOS, PBGA165, 13 X 15 MM, 1.20 MM HEIGHT, FBGA-165 Cache SRAM, 1MX18, 3ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, PLASTIC, MS-026, TQFP-100 Cache SRAM, 1MX18, 3.4ns, CMOS, PBGA165, 13 X 15 MM, 1.20 MM HEIGHT, FBGA-165
Parts packaging code BGA BGA QFP BGA
package instruction 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119 BGA, BGA165,11X15,40 LQFP, BGA, BGA165,11X15,40
Contacts 119 165 100 165
Reach Compliance Code compliant compliant unknown compliant
ECCN code 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
Maximum access time 3.4 ns 3.4 ns 3 ns 3.4 ns
Other features PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE
JESD-30 code R-PBGA-B119 R-PBGA-B165 R-PQFP-G100 R-PBGA-B165
length 22 mm 22 mm 20 mm 22 mm
memory density 18874368 bit 18874368 bit 18874368 bit 18874368 bit
Memory IC Type CACHE SRAM CACHE SRAM CACHE SRAM CACHE SRAM
memory width 36 18 18 18
Number of functions 1 1 1 1
Number of terminals 119 165 100 165
word count 524288 words 1048576 words 1048576 words 1048576 words
character code 512000 1000000 1000000 1000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 85 °C 85 °C 70 °C 70 °C
organize 512KX36 1MX18 1MX18 1MX18
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code BGA BGA LQFP BGA
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form GRID ARRAY GRID ARRAY FLATPACK, LOW PROFILE GRID ARRAY
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 2.4 mm 2.4 mm 1.6 mm 2.4 mm
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3.135 V 3.135 V 3.135 V 3.135 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V
surface mount YES YES YES YES
technology CMOS CMOS CMOS CMOS
Temperature level INDUSTRIAL INDUSTRIAL COMMERCIAL COMMERCIAL
Terminal form BALL BALL GULL WING BALL
Terminal pitch 1.27 mm 1.27 mm 0.65 mm 1.27 mm
Terminal location BOTTOM BOTTOM QUAD BOTTOM
width 14 mm 14 mm 14 mm 14 mm
Maximum clock frequency (fCLK) 167 MHz 167 MHz - 167 MHz
I/O type COMMON COMMON - COMMON
Output characteristics 3-STATE 3-STATE - 3-STATE
Encapsulate equivalent code BGA119,7X17,50 BGA165,11X15,40 - BGA165,11X15,40
power supply 2.5/3.3,3.3 V 2.5/3.3,3.3 V - 2.5/3.3,3.3 V
Maximum standby current 0.06 A 0.06 A - 0.06 A
Minimum standby current 3.14 V 3.14 V - 3.14 V
Maximum slew rate 0.275 mA 0.275 mA - 0.275 mA
Base Number Matches 1 1 1 -
JESD-609 code - e0 e3/e4 e0
Terminal surface - TIN LEAD MATTE TIN/NICKEL PALLADIUM GOLD TIN LEAD

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