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CY7C1387D-200AXCT

Description
Cache SRAM, 1MX18, 3ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, PLASTIC, MS-026, TQFP-100
Categorystorage    storage   
File Size569KB,34 Pages
ManufacturerCypress Semiconductor
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CY7C1387D-200AXCT Overview

Cache SRAM, 1MX18, 3ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, PLASTIC, MS-026, TQFP-100

CY7C1387D-200AXCT Parametric

Parameter NameAttribute value
Parts packaging codeQFP
package instructionLQFP,
Contacts100
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Maximum access time3 ns
Other featuresPIPELINED ARCHITECTURE
JESD-30 codeR-PQFP-G100
JESD-609 codee3/e4
length20 mm
memory density18874368 bit
Memory IC TypeCACHE SRAM
memory width18
Number of functions1
Number of terminals100
word count1048576 words
character code1000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize1MX18
Package body materialPLASTIC/EPOXY
encapsulated codeLQFP
Package shapeRECTANGULAR
Package formFLATPACK, LOW PROFILE
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum seat height1.6 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceMATTE TIN/NICKEL PALLADIUM GOLD
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationQUAD
width14 mm
Base Number Matches1
CY7C1386C
CY7C1387C
18-Mb (512K x 36/1M x 18) Pipelined DCD
Sync SRAM
Features
• Supports bus operation up to 250 MHz
• Available speed grades are 250, 225, 200 and 167 MHz
• Registered inputs and outputs for pipelined operation
• Optimal for performance (Double-Cycle deselect)
• Depth expansion without wait state
• 3.3V –5% and +10% core power supply (V
DD
)
• 2.5V / 3.3V I/O operation
• Fast clock-to-output times
— 2.6 ns (for 250-MHz device)
— 2.8 ns (for 225-MHz device)
— 3.0 ns (for 200-MHz device)
— 3.4 ns (for 167-MHz device)
• Provide high-performance 3-1-1-1 access rate
User-selectable burst counter supporting Intel
Pentium interleaved or linear burst sequences
• Separate processor and controller address strobes
• Synchronous self-timed writes
• Asynchronous output enable
• Offered in JEDEC-standard 100-pin TQFP, 119-ball BGA
and 165-Ball fBGA packages
• IEEE 1149.1 JTAG-Compatible Boundary Scan
• “ZZ” Sleep Mode Option
Functional Description
[1]
The CY7C1386C/CY7C1387C SRAM integrates 524,288 x 36
and 1048,576 x 18 SRAM cells with advanced synchronous
peripheral circuitry and a two-bit counter for internal burst
operation. All synchronous inputs are gated by registers
controlled by a positive-edge-triggered Clock Input (CLK). The
synchronous inputs include all addresses, all data inputs,
address-pipelining Chip Enable (CE
1
), depth-expansion Chip
Enables (CE
2
and CE
3[2]
), Burst Control inputs (ADSC, ADSP,
and ADV), Write Enables (BW
X
, and BWE), and Global Write
(GW). Asynchronous inputs include the Output Enable (OE)
and the ZZ pin.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (ADV).
Address, data inputs, and write controls are registered on-chip
to initiate a self-timed Write cycle.This part supports Byte Write
operations (see Pin Descriptions and Truth Table for further
details). Write cycles can be one to four bytes wide as
controlled by the byte write control inputs. GW active LOW
causes all bytes to be written. This device incorporates an
additional pipelined enable register which delays turning off
the output buffers an additional cycle when a deselect is
executed.This feature allows depth expansion without penal-
izing system performance.
The CY7C1386C/CY7C1387C operates from a +3.3V core
power supply while all outputs operate with a +3.3V or a +2.5V
supply. All inputs and outputs are JEDEC-standard
JESD8-5-compatible.
Selection Guide
250 MHz
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
2.6
350
70
225 MHz
2.8
325
70
200 MHz
3.0
300
70
167 MHz
3.4
275
70
Unit
ns
mA
mA
Shaded areas contain advance information.
Please contact your local Cypress sales representative for availability of these parts.
Notes:
1. For best–practices recommendations, please refer to the Cypress application note
System Design Guidelines
on www.cypress.com.
2. CE
3
and CE
2
are for TQFP and 165 fBGA package only. 119 BGA is offered only in Single Chip Enable.
Cypress Semiconductor Corporation
Document #: 38-05239 Rev. *B
3901 North First Street
San Jose
,
CA 95134
408-943-2600
Revised February 26, 2004

CY7C1387D-200AXCT Related Products

CY7C1387D-200AXCT CY7C1386C-167BGI CY7C1387C-167BZI CY7C1387C-167BZC
Description Cache SRAM, 1MX18, 3ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, PLASTIC, MS-026, TQFP-100 Cache SRAM, 512KX36, 3.4ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119 Cache SRAM, 1MX18, 3.4ns, CMOS, PBGA165, 13 X 15 MM, 1.20 MM HEIGHT, FBGA-165 Cache SRAM, 1MX18, 3.4ns, CMOS, PBGA165, 13 X 15 MM, 1.20 MM HEIGHT, FBGA-165
Parts packaging code QFP BGA BGA BGA
package instruction LQFP, 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119 BGA, BGA165,11X15,40 BGA, BGA165,11X15,40
Contacts 100 119 165 165
Reach Compliance Code unknown compliant compliant compliant
ECCN code 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
Maximum access time 3 ns 3.4 ns 3.4 ns 3.4 ns
Other features PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE
JESD-30 code R-PQFP-G100 R-PBGA-B119 R-PBGA-B165 R-PBGA-B165
length 20 mm 22 mm 22 mm 22 mm
memory density 18874368 bit 18874368 bit 18874368 bit 18874368 bit
Memory IC Type CACHE SRAM CACHE SRAM CACHE SRAM CACHE SRAM
memory width 18 36 18 18
Number of functions 1 1 1 1
Number of terminals 100 119 165 165
word count 1048576 words 524288 words 1048576 words 1048576 words
character code 1000000 512000 1000000 1000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 85 °C 85 °C 70 °C
organize 1MX18 512KX36 1MX18 1MX18
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code LQFP BGA BGA BGA
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLATPACK, LOW PROFILE GRID ARRAY GRID ARRAY GRID ARRAY
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 1.6 mm 2.4 mm 2.4 mm 2.4 mm
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3.135 V 3.135 V 3.135 V 3.135 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V
surface mount YES YES YES YES
technology CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL INDUSTRIAL INDUSTRIAL COMMERCIAL
Terminal form GULL WING BALL BALL BALL
Terminal pitch 0.65 mm 1.27 mm 1.27 mm 1.27 mm
Terminal location QUAD BOTTOM BOTTOM BOTTOM
width 14 mm 14 mm 14 mm 14 mm
JESD-609 code e3/e4 - e0 e0
Terminal surface MATTE TIN/NICKEL PALLADIUM GOLD - TIN LEAD TIN LEAD
Base Number Matches 1 1 1 -
Maximum clock frequency (fCLK) - 167 MHz 167 MHz 167 MHz
I/O type - COMMON COMMON COMMON
Output characteristics - 3-STATE 3-STATE 3-STATE
Encapsulate equivalent code - BGA119,7X17,50 BGA165,11X15,40 BGA165,11X15,40
power supply - 2.5/3.3,3.3 V 2.5/3.3,3.3 V 2.5/3.3,3.3 V
Maximum standby current - 0.06 A 0.06 A 0.06 A
Minimum standby current - 3.14 V 3.14 V 3.14 V
Maximum slew rate - 0.275 mA 0.275 mA 0.275 mA

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