SKiiP 2103GB121-3DW
I. Power section 3 * SKiiP703GB121CT per phase
Absolute maximum ratings
Symbol
Conditions
1)
Values
1200
900
±
20
2100 / 1575
4200
1575 / 1181,25
2700
12960
840
-40...+150 (125)
3000
3 * 500
Units
V
V
V
A
A
A
A
A
kA
2
s
°C
V
A
IGBT and inverse diode
V
CES
V
CC
Operating DC link voltage
V
GES
I
C
IGBT, T
heat sink
= 25 / 70 °C
I
CM
IGBT, t
p
< 1 ms,T
heat sink
= 25°C
I
F
Diode, T
heat sink
= 25 / 70 °C
I
FM
Diode, t
p
< 1 ms
I
FSM
Diode, T
j
= 150 °C, 10ms; sin
2
I t (Diode) Diode, T
j
= 150 °C, 10ms
T
j
, (T
stg
)
V
isol
AC, 1min.
4)
I
C-package
T
heat sink
= 70°C, T
term
= 115 °C
SKiiPPACK
SK integrated intelligent
Power PACK
rd
3 Generation
2-pack
3)
SKiiP 2103GB121-3DW
Target data
housing S33
Characteristics
Symbol
IGBT
V
(BR)CES
Conditions
1)
min.
≥V
CES
−
−
−
−
−
−
−
−
−
typ.
−
3,6
108
0,9
0,90
2,3
−
515
837
4
3
0,13
1,8
−
54
1,0
0,61
−
−
−
−
3 * 400
3 * 500
0,1
±
3000
max.
−
−
−
−
−
−
2
−
−
−
Units
V
mA
mA
V
mΩ
V
V
mJ
mJ
nF
nH
mΩ
V
V
mJ
V
mΩ
°C/W
°C/W
°C/W
°C/W
A
A
%
A
4)
5)
gate driver without supply
V
GE
= 0,
T
j
= 25 °C
I
CES
T
j
= 125 °C
V
CE
= V
CES
7)
V
CEO
T
j
= 125 °C
7)
r
T
T
j
= 125 °C
7)
V
CEsat
I
C
= 1470A,
T
j
= 125 °C
7)
V
CEsat
I
C
= 1470A,
T
j
= 25 °C
I =1470A,
V
CC
=600V
E
on
+ E
off5) C
V
CC
=900V
T
j
= 125 °C
C
per SKiiP, AC side
L
CE
top, bottom
R
CC´-EE´
resistance, terminal-chip
Inverse diode
2)
V
F
= V
EC
I
F
= 1350A;
T
j
= 125 °C
V
F
= V
EC
I
F
= 1350A;
T
j
= 25 °C
5)
E
on
+ E
off
I
F
= 1350A;
T
j
= 125 °C
V
TO
T
j
= 125 °C
r
T
T
j
= 125 °C
Thermal characteristics
R
thjs
per IGBT
R
thjs
per diode
3)
R
thsa
L: P16 heat sink; 280 m
3
/ h
W: WK 40; 8l/min; 50% glycol
Current sensor
I
p RMS
T
a
=100° C , V
supply
=
±
15V
I
pmax RMS
t
≤
2s
V
supply
≥ ±14,25V,
0≤I≤
±
700A,
Linearity
per sensor
I
ppeak
t
≤
10 µs, per sensor
Mechanical data
M1
DC terminals, SI Units
M2
AC terminals, SI Units
M3
to heat sink
6)
−
−
−
−
−
−
−
−
−
−
2,5
−
−
−
0,016
0,031
0,033
0,010
Features
•
SKiiP technology inside
-
pressure contact of ceramic
to heat sink; low thermal
impedance
-
pressure contact of main
electric terminals
-
pressure contact of auxiliary
electric terminals
-
increased thermal cycling
capability
-
low stray inductance
-
homogenous current
distribution
•
integrated current sensor
•
integrated temperature sensor
•
high power density
1)
2)
3)
4
8
−
−
−
3
6)
6
10
−
Nm
Nm
Nm
7)
8)
T
heatsink
= 25 °C, unless
otherwise specified
CAL = Controlled Axial Lifetime
Technology (soft and fast)
D integrated gate driver
U with DC-bus voltage
measurement (option for GB)
L mounted on standard P16 for
forced air cooling
W mounted on standard water
cooler
T
term
= temperature of terminal
with SKiiPPACK 3
rd
generation
gate driver
assembly instruction must be
followed
measured at chip level
external paralleling necessary
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee,
expressed or implied is made regarding delivery, performance or suitability.
by
SEMIKRON
000911
B 7
−
15
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EEWORLD
