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SBL3035PT

Description
30 A, 35 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size113KB,2 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
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SBL3035PT Overview

30 A, 35 V, SILICON, RECTIFIER DIODE

BL
FEATURES
GALAXY ELECTRICAL
SBL3030PT - - - SBL30100PT
VOLTAGE RANGE:
30
---
100
V
CURRENT:
30
A
SCHOTTKY BARRIER RECTIFIER
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop,low switching losses
High surge capability
For use in low voltage,high frequency inverters free
xxxx
wheeling,and polarity protection applications
The plastic material carries U/L recognition 94V-0
TO-247AD(TO-3P)
0.645(16.4)
0.625(15.9)
0.245(6.2)
0.225(5.7)
0.840(21.3)
0.820(20.8)
0.160(4.1)
0.140(3.5)
0.795(20.2)
0.775(19.6)
0.127(3.22)
0.117(2.97)
1
2
3
0.203(5.16)
0.323(8.2)
0.313(7.9)
0.170(4.3)
0.086(2.18)
0.076(1.93)
0.142(3.6)
0.138(3.5)
0.193(4.90)
30°
10°TYP
BOTH SIDES
1°REF
BOTH SIDES
0.118(3.0)
0.108(2.7)
0.078REF
(1.98)
10°
MECHANICAL DATA
0.225(5.7)
0.048(1.22)
0.044(1.12)
PIN1
0.030(0.76)
0.020(0.51)
PIN2
CASE
Case:JEDEC TO-247AD,molded plastic
Terminals: Leads solderable per
MIL- STD-750,Method 2026
Polarity: As marked
Weight: 0.223 ounce, 6.3 grams
Mounting position: Any
0.205(5.2)
PIN3
Dimensions in inches and(millimeters)
inch(mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
SBL
SBL SBL
SBL
SBL
SBL
SBL
SBL
3030PT 3035PT 3040PT 3045PT 3050PT 3060PT 3080PT 30100PT
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
T
C
=100
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
@ 15 A
Maximum reverse current
@T
C
=25
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
30
21
30
35
25
35
40
28
40
45
32
45
30
50
35
50
60
42
60
80
56
80
100
70
100
I
FSM
V
F
I
R
R
θ
JC
T
J
T
STG
275
A
0.55
1.0
75
1.5
0.75
0.85
V
mA
/W
at rated DC blocking voltage @T
C
=100
Typical thermal resistance
(Note1)
Operating junction temperature range
Storage temperature range
Note: 1. Thermal resistance junction to case.
-55--- + 125
-55--- + 150
www.galaxycn.com
Document Number 0266072
BL
GALAXY ELECTRICAL
1
.

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Description 30 A, 35 V, SILICON, RECTIFIER DIODE 30 A, 30 V, SILICON, RECTIFIER DIODE 15 A, 40 V, SILICON, RECTIFIER DIODE, TO-247AD 30 A, 45 V, SILICON, RECTIFIER DIODE 30 A, 30 V, SILICON, RECTIFIER DIODE 30 A, 50 V, SILICON, RECTIFIER DIODE 30 A, 60 V, SILICON, RECTIFIER DIODE 30 A, 30 V, SILICON, RECTIFIER DIODE
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