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USF32

Description
3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size47KB,2 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
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USF32 Overview

3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD

BL
FEATURES
GALAXY ELECTRICAL
USF31 --- USF34
VOLTAGE RANGE: 50 --- 200 V
CURRENT: 3.0 A
SUPER FAST RECTIFIER
Low cost
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
DO - 27
.052(1.3)
.048(1.2)
.217(5.5)
.193(4.9)
MECHANICAL DATA
Case:JEDEC DO--27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041 ounces,1.15 grams
Mounting position: Any
1.0(25.4)MIN
.374(9.5)
.350(8.9)
1.0(25.4)MIN
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60Hz,resistive or inductive load. For capacitive load,derate by 20%.
USF31
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
USF32
100
70
100
3.0
USF33
150
105
150
USF34
200
140
200
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
125.0
A
Maximum instantaneous forw ard voltage
@ 3.0A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
0.92
10.0
500.0
20
20
20
- 55 ----- + 150
- 55 ----- + 150
V
A
ns
pF
/W
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
www.galaxycn.com
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
Document Number 0264030
BL
GALAXY ELECTRICAL
1
.

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