BL
FEATURES
GALAXY ELECTRICAL
USF31 --- USF34
VOLTAGE RANGE: 50 --- 200 V
CURRENT: 3.0 A
SUPER FAST RECTIFIER
Low cost
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
DO - 27
.052(1.3)
.048(1.2)
.217(5.5)
.193(4.9)
MECHANICAL DATA
Case:JEDEC DO--27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041 ounces,1.15 grams
Mounting position: Any
1.0(25.4)MIN
.374(9.5)
.350(8.9)
1.0(25.4)MIN
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60Hz,resistive or inductive load. For capacitive load,derate by 20%.
USF31
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
USF32
100
70
100
3.0
USF33
150
105
150
USF34
200
140
200
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
125.0
A
Maximum instantaneous forw ard voltage
@ 3.0A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
0.92
10.0
500.0
20
20
20
- 55 ----- + 150
- 55 ----- + 150
V
A
ns
pF
/W
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
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2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
Document Number 0264030
BL
GALAXY ELECTRICAL
1
.
RATINGS AND CHARACTERISTIC CURVES
t
rr
50
N 1.
10
N 1.
USF31 --- USF34
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
+0.5A
0
PULSE
GENERATOR
(NOTE2)
1
NONIN-
DUCTIVE
OSCILLOSCOPE
(NOTE 1)
D.U.T.
(+)
25VDC
(approx)
(-)
-0 .2 5A
-1 .0 A
1 cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF.
JJJJJ2.RISE
TIME =10ns MAX.SOURCE IMPEDANCE=50 .
SET TIME BASE FOR 10/20 ns/cm
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
INSTANTANEOUS FORWARD
CURRENT, AMPERES
100
40
20
10
4
2
FIG.3 -- FORWARD DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
z
T
J
=25
P u ls e W id th = 3 0 0
µ
s
5
4
3
2
1
0
0
Single Phase
Half Wave 60HZ
Resistive or
Inductive Load
0.375"(9.5mm)Lead Length
1
0 .4
0 .2
0 .1
0 .0 4
0 .0 2
0 .0 1
0 0 .2
0 .4 0 .6
0 .8
1 .0 1 .2
1 .4
25
50
75
100
125
150
175
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE,pF
AMBIENT TEMPERATURE,
FIG.5 -- PEAK FORWARD SURGE CURRENT
PEAK FORWARD SURGE
CURRENT, AMPERES
100
60
40
20
10
6
4
2
1
0.1 0.2
T
J
=25
f=1.0MH
Z
150
8.3ms Single Half
Sine-Wave
125
100
75
50
25
0
0.4
1
2
4
10
20
40
100
1
5
10
50
100
REVERSE VOLTAGE,VOLTS
FIG.6 -- TYPICAL REVERSE CHARACTERISTICS
CURRENT, MICROAMPERES
NUMBER OF CYCLES AT 60Hz
INSTANTANEOUS REVERSE
100
T
J
= 1 5 0
10
1
T
J
= 1 0 0
.1
T
J
= 2 5
.0 1
0
20
40
60
80
100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE,
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Document Number 0264030
BL
GALAXY ELECTRICAL
2.
MCU
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