DD285N06K-K datasheet, PDF - EEWORLD Datasheet

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DD285N06K-K: DescriptionRectifier Diode, 1 Phase, 2 Element, 285A, 600V V(RRM), Silicon, MODULE-3; CategoryDiscrete semiconductor diode; File Size267KB，10 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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DD285N06K-K Overview

Rectifier Diode, 1 Phase, 2 Element, 285A, 600V V(RRM), Silicon, MODULE-3

DD285N06K-K Parametric

Parameter Name	Attribute value
package instruction	MODULE-3
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	UL RECOGNIZED
application	GENERAL PURPOSE
Shell connection	ISOLATED
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.15 V
JESD-30 code	R-XUFM-X3
Maximum non-repetitive peak forward current	8300 A
Number of components	2
Phase	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-40 °C
Maximum output current	285 A
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Maximum repetitive peak reverse voltage	600 V
Maximum reverse current	20000 µA
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
Base Number Matches	1

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Netz-Dioden-Modul

Rectifier Diode Module

Datenblatt / Data sheet

DD285N

DD285N..K..-K

Elektrische Eigenschaften / Electrical properties

Kenndaten

Höchstzulässige Werte / Maximum rated values

Periodische Spitzensperrspannung

repetitive peak reverse voltages

Stoßspitzensperrspannung

non-repetitive peak reverse voltage

Durchlaßstrom-Grenzeffektivwert

maximum RMS on-state current

Dauergrenzstrom

average on-state current

Stoßstrom-Grenzwert

surge current

Grenzlastintegral

I²t-value

Charakteristische Werte / Characteristic values

Durchlaßspannung

on-state voltage

Schleusenspannung

threshold voltage

Ersatzwiderstand

slope resistance

Sperrstrom

reverse current

Isolations-Prüfspannung

insulation test voltage

Elektrische Eigenschaften

Thermische Eigenschaften

= -40°C... T

vj max

RRM

400

600 V

800 V

700 V

900 V

450 A

285 A

9.500 A

8.300 A

451.000 A²s

344.000 A²s

= +25°C... T

vj max

RSM

FRMSM

500

= 100°C

= 25 °C, t

= 10 ms

= T

vj max

, t

= 10 ms

= 25 °C, t

= 10 ms

= T

vj max

, t

= 10 ms

FAVM

FSM

I²t

= T

vj max

, i

= 800 A

= T

vj max

= T

vj max

= T

vj max

, v

= V

RRM

RMS, f = 50 Hz, t = 1 sec

RMS, f = 50 Hz, t = 1 min

(TO)

ISOL

max.

1,15 V

0,75 V

0,4 mΩ

max.

20 mA

3,6 kV

3,0 kV

Thermische Eigenschaften / Thermal properties

Innerer Wärmewiderstand

thermal resistance, junction to case

pro Modul / per Module,

= 180° sin R

thJC

pro Zweig / per arm,

= 180° sin

pro Modul / per Module, DC

pro Zweig / per arm, DC

pro Modul / per Module

pro Zweig / per arm

thCH

vj max

c op

stg

max.

0,085

0,170

0,082

0,164

°C/W

Übergangs-Wärmewiderstand

thermal resistance, case to heatsink

Höchstzulässige Sperrschichttemperatur

maximum junction temperature

Betriebstemperatur

operating temperature

Lagertemperatur

storage temperature

prepared by: C. Drilling

approved by: M. Leifeld

date of publication:

revision:

0,02 °C/W

0,04 °C/W

150 °C

- 40...+150 °C

30.07.04

MA2-BE / 87-08-20, K.Spec

A14/04

Seite/page

1/9

DD285N06K-K Related Products

	DD285N06K-K	DD285N02K	DD285N04KHPSA1	DD285N02KHPSA1	DD285N04K-K	DD285N04KHOSA1
Description	Rectifier Diode, 1 Phase, 2 Element, 285A, 600V V(RRM), Silicon, MODULE-3	Discrete Semiconductor Modules 285A Iout 200V Vrrm	DIODE MODULE GP 400V 285A	DIODE MODULE GP 200V 285A	Rectifier Diode, 1 Phase, 2 Element, 285A, 400V V(RRM), Silicon, MODULE-3	Rectifier Diode,
package instruction	MODULE-3	-	R-XUFM-X3	-	R-XUFM-X3	MODULE-3
Reach Compliance Code	compliant	-	compliant	-	compliant	compliant
Other features	UL RECOGNIZED	-	UL RECOGNIZED	-	UL RECOGNIZED	UL RECOGNIZED
application	GENERAL PURPOSE	-	GENERAL PURPOSE	-	GENERAL PURPOSE	GENERAL PURPOSE
Shell connection	ISOLATED	-	ISOLATED	-	ISOLATED	ISOLATED
Configuration	COMMON CATHODE, 2 ELEMENTS	-	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	-	COMMON CATHODE, 2 ELEMENTS	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materials	SILICON	-	SILICON	-	SILICON	SILICON
Diode type	RECTIFIER DIODE	-	RECTIFIER DIODE	standard	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.15 V	-	1.15 V	-	1.15 V	1.15 V
JESD-30 code	R-XUFM-X3	-	R-XUFM-X3	-	R-XUFM-X3	R-XUFM-X3
Maximum non-repetitive peak forward current	8300 A	-	8300 A	-	8300 A	8300 A
Number of components	2	-	2	-	2	2
Phase	1	-	1	-	1	1
Number of terminals	3	-	3	-	3	3
Maximum operating temperature	150 °C	-	150 °C	-	150 °C	150 °C
Minimum operating temperature	-40 °C	-	-40 °C	-	-40 °C	-40 °C
Maximum output current	285 A	-	285 A	-	285 A	285 A
Package body material	UNSPECIFIED	-	UNSPECIFIED	-	UNSPECIFIED	UNSPECIFIED
Package shape	RECTANGULAR	-	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	-	FLANGE MOUNT	-	FLANGE MOUNT	FLANGE MOUNT
Maximum repetitive peak reverse voltage	600 V	-	400 V	-	400 V	400 V
Maximum reverse current	20000 µA	-	20000 µA	-	20000 µA	20000 µA
surface mount	NO	-	NO	-	NO	NO
Terminal form	UNSPECIFIED	-	UNSPECIFIED	-	UNSPECIFIED	UNSPECIFIED
Terminal location	UPPER	-	UPPER	-	UPPER	UPPER

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