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AN1A3Q

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, SC-43B, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size81KB,4 Pages
ManufacturerNEC Electronics
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AN1A3Q Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, SC-43B, 3 PIN

AN1A3Q Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTOR RATIO 10
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)80
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)6000 ns
Maximum opening time (tons)200 ns
Base Number Matches1
DATA SHEET
COMPOUND TRANSISTOR
AN1A3Q
on-chip resistor PNP silicon epitaxial transistor
For mid-speed switching
FEATURES
• On-chip bias resistor
(R
1
= 1.0 kΩ, R
2
= 10 kΩ)
• Complementary transistor with AA1A3Q
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (Pulse)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
P
T
T
j
T
stg
Ratings
−60
−50
−5
–100
–200
250
150
−55
to +150
Unit
V
V
V
mA
mA
mW
°C
°C
* PW
10 ms, duty cycle
50 %
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector cutoff current
DC current gain
DC current gain
Collector saturation voltage
Low level input voltage
High level input voltage
Input resistance
E-to-B resistance
Turn-on time
Storage time
Turn-off time
Symbol
I
CBO
h
FE1
**
h
FE2
**
V
CE(sat)
**
V
IL
**
V
IH
**
R
1
R
2
t
on
t
stg
t
off
V
CC
=
−5
V, R
L
= 1 kΩ
V
I
=
−5
V, PW = 2
µ
s
duty cycle≤2 %
Conditions
V
CB
=
−50
V, I
E
= 0
V
CE
=
−5.0
V, I
C
=
−5.0
mA
V
CE
=
−5.0
V, I
C
=
−50
mA
I
C
=
−5.0
mA, I
B
=
−0.25
mA
V
CE
=
−5.0
V, I
C
=
−100
µ
A
V
CE
=
−0.2
V, I
C
=
−5.0
mA
−2.0
0.7
7
35
80
60
200
−0.04
−0.7
−1.0
1.0
10
1.3
13
0.2
5.0
6.0
−0.2
−0.5
MIN.
TYP.
MAX.
−100
100
Unit
nA
V
V
V
kΩ
kΩ
µ
s
µ
s
µ
s
** Pulse test PW
350
µ
s, duty cycle
2 %
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16165EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998

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