BL
GALAXY ELECTRICAL
1H1G - - - 1H8G
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 1.0 A
HIGH EFFICIENCY RECTIFIER
FEATURES
Diffused junction
Glass passivated chip junction
High current capability
High reliability
High surge current capability
MECHANICAL DATA
Case:JEDEC R-1,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.007 ounces,0.20 grams
Mounting position: Any
R-1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwise specified.
Single phase,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
1H1G 1H2G 1H3G 1H4G 1H5G 1H6G 1H7G 1H8G
UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectif ied current
9.5mm lead length,
@T
A
=75
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
200
140
200
300
210
300
1.0
400
280
400
600
420
600
800
560
800
1000
700
1000
V
V
V
A
Peak f orw ard surge current
8.3ms single half -sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
30.0
A
Maximum instantaneous f orw ard voltage
@ 1.0 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
(Note1)
(Note2)
(Note3)
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
1.0
1.3
5.0
100.0
50
20
60
- 55 ---- + 150
- 55 ---- + 150
1.7
V
A
Maximum
reverse recovery time
Typical junction capacitance
Typical thermal resistance
70
15
ns
pF
/W
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
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2. Measured at 1.0MH
Z
and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
Document Number 0269027
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
1H1G - -
-
1H8G
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
N 1.
10
N 1.
t
rr
+0.5A
D.U.T.
0
(+)
25VDC
(approx)
(-)
1
NONIN-
DUCTIVE
PULSE
GENERATOR
(NOTE2)
OSCILLOSCOPE
(NOTE 1)
-0.25A
-1.0A
1cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF.
JJJJJ2.RISE
TIME =10ns MAX.SOURCE IMPEDANCE=50 .
SET TIME BASE FOR 20/30 ns/cm
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
INSTANTANEOUS FORWARD CURRENT
1H1G-1H3G
1H6G-1H8G
FIG.3 -- FORWARD DERATING CURVE
AVERAGE FORWARD CURRENT
10
1.0
0.75
1.0
AMPERES
AMPERES
1H4G-1H5G
0.5
Single Phase
Half Wave 60H
Z
Resistive or
Inductive Load
0.1
T
J
=25
Pulse Width=300
µ
S
0.25
0.01
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
0
25
50
75
100
125
150
175
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
AMBIENT TEMPERATURE,
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
PEAK FORWARD SURGE CURRENT
FIG.5 -- PEAK FORWARD SURGE CURRENT
30
JUNCTION CAPACITANCE,pF
200
100
60
40
20
10
6
4
1H6G-1H8G
1H1G-1H5G
24
1
8
AMPERES
T
J
=125
8.3ms Single Half
Sine-Wave
12
T
J
=25℃
2
1
6
0.1
0.2
0.4
1
2
4
10
20
40
100
0
1
2
4
10
20
40
100
REVERSE VOLTAGE,VOLTS
NUMBER OF CYCLES AT 60Hz
www.galaxycn.com
Document Number 0269027
BL
GALAXY ELECTRICAL
2.
TI Technology Forum
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