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1H2G

Description
1 A, 100 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size63KB,2 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
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1H2G Overview

1 A, 100 V, SILICON, SIGNAL DIODE

BL
GALAXY ELECTRICAL
1H1G - - - 1H8G
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 1.0 A
HIGH EFFICIENCY RECTIFIER
FEATURES
Diffused junction
Glass passivated chip junction
High current capability
High reliability
High surge current capability
MECHANICAL DATA
Case:JEDEC R-1,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.007 ounces,0.20 grams
Mounting position: Any
R-1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwise specified.
Single phase,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
1H1G 1H2G 1H3G 1H4G 1H5G 1H6G 1H7G 1H8G
UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectif ied current
9.5mm lead length,
@T
A
=75
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
200
140
200
300
210
300
1.0
400
280
400
600
420
600
800
560
800
1000
700
1000
V
V
V
A
Peak f orw ard surge current
8.3ms single half -sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
30.0
A
Maximum instantaneous f orw ard voltage
@ 1.0 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
(Note1)
(Note2)
(Note3)
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
1.0
1.3
5.0
100.0
50
20
60
- 55 ---- + 150
- 55 ---- + 150
1.7
V
A
Maximum
reverse recovery time
Typical junction capacitance
Typical thermal resistance
70
15
ns
pF
/W
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
www.galaxycn.com
2. Measured at 1.0MH
Z
and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
Document Number 0269027
BL
GALAXY ELECTRICAL
1.

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