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ER2D

Description
2 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AA
Categorysemiconductor    Discrete semiconductor   
File Size98KB,2 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
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ER2D Overview

2 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AA

BL
GALAXY ELECTRICAL
SURFACE MOUNT RECTIFIER
FEATURES
Low cost
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
ER2A --- ER2J
VOLTAGE RANGE:
50
--- 600 V
CURRENT:
2.0
A
DO - 214AA(SMB)
MECHANICAL DATA
Case:JEDEC DO-214AA,molded plastic
Terminals:
Solderable
per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.003 ounces,0.093 grams
Mounting position: Any
½½½½(½½)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
ER2A
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
@T
A
=75
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
Maximum instantaneous forw ard voltage
@
2.0A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=125
(Note 2)
(Note 3)
ER2B
100
70
100
ER2C
150
105
150
ER2D
200
140
200
2.0
ER2E
300
210
300
ER2G
400
280
400
ER2J UNITS
600
420
600
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
I
FSM
V
F
I
R
t
rr
C
J
R
θJA
T
J
T
STG
0.95
50
A
1.25
5.0
200
35
62
40
- 55 ----- + 150
- 55 ----- + 150
1.7
V
A
ns
pF
/W
Maximum reverse recovery time (Note 1)
Typical junction capacitance
Typical thermal resistance
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
www.galaxycn.com
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient.
Document Number 0280022
BL
GALAXY ELECTRICAL
1
.

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