BL
GALAXY ELECTRICAL
SURFACE MOUNT RECTIFIER
FEATURES
Low cost
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
ER2A --- ER2J
VOLTAGE RANGE:
50
--- 600 V
CURRENT:
2.0
A
DO - 214AA(SMB)
MECHANICAL DATA
Case:JEDEC DO-214AA,molded plastic
Terminals:
Solderable
per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.003 ounces,0.093 grams
Mounting position: Any
½½½½（½½）
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
ER2A
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
@T
A
=75
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
Maximum instantaneous forw ard voltage
@
2.0A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=125
(Note 2)
(Note 3)
ER2B
100
70
100
ER2C
150
105
150
ER2D
200
140
200
2.0
ER2E
300
210
300
ER2G
400
280
400
ER2J UNITS
600
420
600
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
I
FSM
V
F
I
R
t
rr
C
J
R
θJA
T
J
T
STG
0.95
50
A
1.25
5.0
200
35
62
40
- 55 ----- + 150
- 55 ----- + 150
1.7
V
A
ns
pF
/W
Maximum reverse recovery time (Note 1)
Typical junction capacitance
Typical thermal resistance
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
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2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient.
Document Number 0280022
BL
GALAXY ELECTRICAL
1
.
RATINGS AND CHARACTERISTIC CURVES
50
N 1.
10
N 1.
t
rr
ER2A---ER2J
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
+0.5A
0
-0.25A
D.U.T.
(+)
25VDC
(approx)
(-)
PULSE
GENERATOR
(NOTE2)
1
NONIN-
DUCTIVE
OSCILLOSCOPE
(NOTE 1)
-1.0A
1cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF.
JJJJJ2.RISE
TIME =10ns MAX.SOURCE IMPEDANCE=50 .
SET TIME BASE FOR 10/20 ns/cm
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
INSTANTANEOUS FORWARD
3.0
ER2E -
ER2G
FIG.3 -- FORWARD DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
2.4
2.0
1.6
1.2
0.8
0.4
0
25
Single Phase
Half Wave 60H
Z
Resistive or
Inductive Load
0.375"(9.5mm)Lead Length
z
CURRENT, AMPERES
2.0
ER2A- ER2D
ER2J
1.0
T
J
=25
Pulse Width=300
µ
s
0.1
0
0.4
0.8
1.2
1.6
2.0
2.4
50
75
100
125
150
175
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
AMBIENT TEMPERATURE,
FIG.5 -- PEAK FORWARD SURGE CURRENT
JUNCTION CAPACITANCE,pF
100
60
40
20
10
6
4
2
1
T
J
=25
f=1.0MHz
PEAK FORWARD SURGE
CURRENT,AMPERES
60
50
40
30
20
10
0
1
8.3ms Single Half
Sine-Wave
0.1 0.2 0.4
1
2
4
10
20 40
100
2
5
10
20
50
100
REVERSE VOLTAGE,VOLTS
FIG.6 -- TYPICAL REVERSE CHARACTERISTICS
NUMBER OF CYCLES AT 60Hz
INSTANTANEOUS REVERSE
CURRENT,MICROAMPERES
1000
100
T
J
=100
10
T
J
=75
1.0
TJ=25
0.1
0.01
0
20 40
60
80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE.
www.galaxycn.com
Document Number 0280022
BL
GALAXY ELECTRICAL
2.
Microcontroller MCU
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