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S3A

Description
3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AB
Categorysemiconductor    Discrete semiconductor   
File Size44KB,2 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
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S3A Overview

3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AB

S3A Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionSMCJ, 2 PIN
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
terminal coatingtin lead
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Diode component materialssilicon
Diode typerectifier diode
applicationGENERAL PURPOSE
Phase1
Maximum reverse recovery time2 us
Maximum repetitive peak reverse voltage50 V
Maximum average forward current3 A
Maximum non-repetitive peak forward current100 A
BL
FEATURES
GALAXY ELECTRICAL
S3A --- S3M
111REVERSE
VOLTAGE: 50 --- 1000 V
CURRENT:
3.0
A
SURFACE MOUNT RECTIFIER
Plastic package has underwriters laboratory
111
flammability classification 94V-0
For surface mounted applications
Low profile package
Built-in strain relief,ideal for automated placement
Glass passivated chip junction
High temperature soldering:
111
250
o
C/10 seconds at terminals
DO - 214AB(SMC)
MECHANICAL DATA
Case:JEDEC DO-214AB,molded plastic over
1111passivated
chip
Terminals:Solder plated, solderable per MIL-STD-
1111750,
Method 2026
Polarity: Color band denotes cathode end
Weight: 0.007 ounces, 0.21 gram
inch(mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified
S3A
Device marking code
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC Blocking Voltage
Maximum average forw ord rectified current
V
@ T
L
=90
O
C
Peak forw ard surge current @ T
L
= 110°C 8.3ms
V
single half-sine-w ave superimposed on rated
V
load(JEDEC Method)
Maximum Instantaneous forw ard voltage at 3.0 A
Maximum DC reverse current
at rated DC blockjing voltage
@T
A
=25
o
C
@T
A
=125
o
C
S3B
SB
100
70
100
S3D
SD
200
140
200
S3G
SG
400
280
400
3.0
100.0
1.15
1.0
125.0
S3J
SJ
600
420
600
S3K
SK
800
560
800
S3M
UNITS
SM
1000
700
1000
V
V
V
A
A
V
SA
V
RRM
V
RWS
V
DC
I
F(AV)
I
FSM
V
F
I
R
C
J
R
R
JA
JL
50
35
50
Typical junction capacitance (NOTE 2)
Typical thermal resitance (NOTE 3)
30.0
53.0
16.0
-55--------+150
o
pF
C/W
o
Operating junction and storage temperature range
T
J
T
STG
NOTE: 1.Measured at 1.0MHz and applied reverse voltage of 4.0 Volts
C
www.galaxycn.com
2. Thermal resistance f rom junction to ambient and junction to lead P.C.B.mounted on 0.27''X0.27''(7.0X7.0mm2) copper pad areas
Document Number 0280010
BL
GALAXY ELECTRICAL
1.

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S3A S3D S3G S3J S3B S3K S3M
Description 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 400 V, SILICON, RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AB
state ACTIVE - DISCONTINUED ACTIVE ACTIVE - ACTIVE
Diode type rectifier diode - rectifier diode RECTIFIER DIODE RECTIFIER DIODE - rectifier diode
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