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BU522BBA

Description
TRANSISTOR 7 A, 425 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size346KB,60 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

BU522BBA Overview

TRANSISTOR 7 A, 425 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power

BU522BBA Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-220AB
package instructionPLASTIC, TO-220AB, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)7 A
Collector-emitter maximum voltage425 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)250
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)7.5 MHz
Base Number Matches1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
High Voltage Silicon Power
Darlingtons
Power Transistor mainly intended for use as ignition circuit output transistor.
Specified minimum sustaining voltage:
VCER(sus) = 425 V at IC = 1 A
High S.O.A. capability:
VCE = 400 V
Low VCE(sat) = 2.0 V max. at IC = 4 A
BU522B
7 AMPERES
DARLINGTON
POWER TRANSISTORS
NPN SILICON
450 VOLTS
75 WATTS
PD , POWER DISSIPATION (W)
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MAXIMUM RATINGS
Rating
Symbol
BU522B
425
450
475
5.0
7.0
2.0
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Collector–Emitter Voltage Sust.
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
VCER(sus)
VCER
VCBO
VEBO
IC
IB
Collector Current Continuous
Base Current
Total Device Dissipation @ TC = 25
_
C
Derate above 25
_
C
Operating and Storage Junction
Temperature Range
PD
75
0.60
Watts
W/
_
C
TJ, Tstg
– 65 to 150
CASE 221A–06
TO–220AB
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
θ
JC
Max.
1.67
Unit
Thermal Resistance, Junction to Case
_
C/W
100
75
50
25
0
0
20
40
80
100
60
120
TC, CASE TEMPERATURE (°C)
140
160
Figure 1. Power Derating
REV 7
3–246
Motorola Bipolar Power Transistor Device Data
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