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KBP06

Description
2 A, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size70KB,2 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
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KBP06 Overview

2 A, SILICON, BRIDGE RECTIFIER DIODE

BL
FEATURES
GALAXY ELECTRICAL
KBP005
- - -
KBP10
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 2.0 A
SILICON BRIDGE RECTIFIERS
Rating to 1000V PRV
Surge overload rating to 50 Amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
KBP
0.20(5.1)
0.18(4.6)
0.039(1.0)
0.055(1.4)
0.600(15.2)
0.560(14.2)
0.125(3.2)X45
plastic technique results in inexpensive product
AC
0.460(11.7)
0.420(10.7)
Lead solderable per MIL-STD-202 method 208
0.50(12.7)MIN
Plastic material has UL flammability classification
94V-O
Weight: 0.050 ounces,1.42 grams
0.60(15.2)MIN
Glass passivated chip junctions
0.034(0.86)DIA
0.028(0.76)TYP
0.160(4.1)
0.140(3.6)
inch(mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
KBP005 KBP01 KBP02 KBP04 KBP06 KBP08 KBP10
UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard
Output current
@T
A
=
2
5
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
200
140
200
400
280
400
2.0
600
420
600
800
560
800
1000
700
1000
V
V
V
A
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
@
2
.0 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
I
FSM
50.0
A
V
F
I
R
T
J
T
STG
1.1
10.0
1.0
- 55 ---- + 125
- 55 ---- + 150
V
μ
A
mA
Operating junction temperature range
Storage temperature range
www.galaxycn.com
Document Number 0287016
BL
GALAXY ELECTRICAL
1.

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KBP06 KBP02 KBP005 KBP04 KBP10 KBP08 KBP01
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