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RS403

Description
4 A, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size81KB,2 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
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RS403 Overview

4 A, SILICON, BRIDGE RECTIFIER DIODE

BL
FEATURES
GALAXY ELECTRICAL
RS401 --- RS407
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 4.0 A
SILICON BRIDGE RECTIFIERS
KBU
.935(23.7)
.895(22.6)
.185(4.7)
.165(4.2)
.160(4.1)
.140(3.6)
45
0
Rating to 1000V PRV
Surge overload rating to 150 Amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
Lead solderable per MIL-STD-202 method 208
1.0(25.4)Min
.760(19.3)Max
.700(17.8)
.660(16.8)
.280(7.1)
.260(6.6)
.085(2.2)
.065(1.7)
+
+
_
.075(1.9)R.TYP.
(2 PLACES)
~
~
+
.455(11.3)
.405(10.3)
.260(6.6)
.180(4.5)
.205(5.2)
.185(4.7)
.052(1.3)
.048(1.2)
.220(5.6)
.180(4.6)
inch(mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
RS401 RS402 RS403 RS404 RS405 RS406 RS407 UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard
Output current
@T
A
=25
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
200
140
200
400
280
400
4.0
600
420
600
800
560
800
1000
700
1000
V
V
V
A
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
at 2.0 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
I
FSM
150.0
A
V
F
I
R
T
J
T
STG
1.0
10.0
1.0
- 55 ---- + 125
- 55 ---- + 150
V
μA
mA
Operating junction temperature range
Storage temperature range
www.galaxycn.com
Document Number 0287018
BL
GALAXY ELECTRICAL
1.

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RS403 RS401 RS404 RS405
Description 4 A, SILICON, BRIDGE RECTIFIER DIODE 4 A, SILICON, BRIDGE RECTIFIER DIODE 4 A, SILICON, BRIDGE RECTIFIER DIODE 4 A, SILICON, BRIDGE RECTIFIER DIODE
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