BL
Galaxy Electrical
Schottky Barrier Diode
FEATURES
Extremely low V
F
.
Low stored change,majority carrier
conduction.
Low power loss/high efficient
Production specification
B5817W-B5819W
Pb
Lead-free
APPLICATIONS
For Use In Low Voltage, High Frequency Inverters.
Free Wheeling, And Polarity Protection Applications.
SOD-123
ORDERING INFORMATION
Type No.
B5817W
B5818W
B5819W
Marking
SJ
SK
SL
Package Code
SOD-123
SOD-123
SOD-123
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Parameter
Non-Repetitive Peak reverse voltage
Peak repetitive Peak reverse voltage
Working Peak Reverse voltage
DC Reverse Voltage
RMS Reverse Voltage
Average Rectified output Current
Peak forward surge current@=8.3ms
Repetitive Peak Forward Current
Power Dissipation
Thermal Resistance Junction to Ambient
Storage temperature
symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
o
I
FSM
I
FRM
P
d
R
θJA
T
STG
B5817W
20
B5818W
30
B5819W
40
Unit
V
20
30
40
V
14
1
25
625
250
500
-65~+150
21
28
V
A
A
mA
mW
℃/W
℃
Document number: BL/SSSKA006
Rev.A
www.galaxycn.com
1
BL
Galaxy Electrical
Schottky Barrier Diode
Production specification
B5817W-B5819W
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Parameter
Symbol
Test Condition
I
R
=1mA
Reverse breakdown voltage
V
(BR)
B5817W
B5818W
B5819W
V
R
=20V
V
R
=30V
V
R
=40V
B5817W
B5818W
B5819W
Diode capacitance
C
D
V
R
=4V,f=1MHz
B5817W
B5818W
B5819W
I
F
=1A
I
F
=3A
I
F
=1A
I
F
=3A
I
F
=1A
I
F
=3A
20
30
40
1
0.45
0.75
0.55
0.875
0.6
0.9
120
pF
V
V
MIN
MAX
UNIT
Reverse voltage leakage current
I
R
mA
Forward voltage
V
F
TYPICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Document number: BL/SSSKA006
Rev.A
www.galaxycn.com
2
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