BC847A datasheet, PDF - EEWORLD Datasheet

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BC847A: Description100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR; Categorysemiconductor Discrete semiconductor; File Size173KB，4 Pages; ManufacturerBILIN; Websitehttp://www.galaxycn.com/

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BC847A Overview

100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR

BC847A Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	NPN
Maximum collector current	0.1000 A
Maximum Collector-Emitter Voltage	45 V
Processing package description	ROHS COMPLIANT PACKAGE-3
Lead-free	Yes
EU RoHS regulations	Yes
China RoHS regulations	Yes
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	MATTE TIN
Terminal location	DUAL
Packaging Materials	PLASTIC/EPOXY
structure	SINGLE
Number of components	1
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Transistor type	GENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor	110
Rated crossover frequency	250 MHz

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Galaxy Electrical

NPN

general purpose Transistor

FEATURES

High current gain.

Excellent h

linearity .

Low noise between 30Hz and 15kHz.

For AF input stages and driver applications.

Production specification

BC846/847/848

Lead-free

APPLICATIONS

General purpose switching and amplification.

SOT-23

ORDERING INFORMATION

Type No.

BC846A/B

BC847A/B/C

BC848A/B/C

Marking

1A/1B

1E/1F/1G

1J/1K/1L

Package Code

SOT-23

MAXIMUM RATING

@ Ta=25℃ unless otherwise specified

Symbol

CBO

Collector-Emitter Voltage

CEO

Emitter-Base Voltage

EBO

stg

Collector Current -Continuous

Collector Dissipation

Junction and Storage Temperature

Parameter

Collector-Base Voltage

BC846

BC847

BC848

BC846

BC847

BC848

BC846

BC847

BC848

Value

0.1

200

-65~150

Units

℃

Document number: BL/SSSTC043

Rev.A

www.galaxycn.com

BC847A Related Products

	BC847A	BC846A	BC848A	BC846	BC848C	BC848B	BC847C	BC847B	BC846B
Description	100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR	100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR	100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR	100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB	100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR	RF SMALL SIGNAL TRANSISTOR	TRANSISTOR,BJT,NPN,45V V(BR)CEO,100MA I(C),SOT-23	SMALL SIGNAL TRANSISTOR	TRANSISTOR,BJT,NPN,65V V(BR)CEO,100MA I(C),SOT-23
state	ACTIVE	DISCONTINUED	DISCONTINUED	ACTIVE	ACTIVE	ACTIVE	CONSULT MFR	ACTIVE	ACTIVE
Transistor type	GENERAL PURPOSE SMALL SIGNAL	Universal small signal	Universal small signal	Universal small signal	GENERAL PURPOSE SMALL SIGNAL	RF SMALL SIGNAL	Universal small signal	Universal small signal	Universal small signal
Number of terminals	3	3	3	3	3	-	-	-	-
Transistor polarity	NPN	NPN	NPN	NPN	NPN	-	-	-	-
Maximum collector current	0.1000 A	0.1000 A	0.1000 A	0.1000 A	0.1000 A	-	-	-	-
Maximum Collector-Emitter Voltage	45 V	65 V	65 V	65 V	30 V	-	-	-	-
Processing package description	ROHS COMPLIANT PACKAGE-3	SOT-23, 3 PIN	SOT-23, 3 PIN	PLASTIC PACKAGE-3	ROHS COMPLIANT PACKAGE-3	-	-	-	-
packaging shape	RECTANGULAR	Rectangle	Rectangle	Rectangle	RECTANGULAR	-	-	-	-
Package Size	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	-	-	-	-
surface mount	Yes	Yes	Yes	Yes	Yes	-	-	-	-
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	-	-	-	-
terminal coating	MATTE TIN	tin lead	tin lead	tin	MATTE TIN	-	-	-	-
Terminal location	DUAL	pair	pair	pair	DUAL	-	-	-	-
Packaging Materials	PLASTIC/EPOXY	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	PLASTIC/EPOXY	-	-	-	-
structure	SINGLE	single	single	single	SINGLE	-	-	-	-
Number of components	1	1	1	1	1	-	-	-	-
transistor applications	AMPLIFIER	switch	switch	switch	AMPLIFIER	-	-	-	-
Transistor component materials	SILICON	silicon	silicon	silicon	SILICON	-	-	-	-
Minimum DC amplification factor	110	110	110	110	420	-	-	-	-
Rated crossover frequency	250 MHz	300 MHz	300 MHz	100 MHz	250 MHz	-	-	-	-

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