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BC846A

Description
100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size173KB,4 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
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BC846A Overview

100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR

BC846A Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current0.1000 A
Maximum Collector-Emitter Voltage65 V
Processing package descriptionSOT-23, 3 PIN
stateDISCONTINUED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingtin lead
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Maximum ambient power consumption0.3100 W
Transistor typeUniversal small signal
Minimum DC amplification factor110
Rated crossover frequency300 MHz
BL
Galaxy Electrical
NPN
general purpose Transistor
FEATURES
High current gain.
Excellent h
FE
linearity .
Low noise between 30Hz and 15kHz.
For AF input stages and driver applications.
Production specification
BC846/847/848
Pb
Lead-free
APPLICATIONS
General purpose switching and amplification.
SOT-23
ORDERING INFORMATION
Type No.
BC846A/B
BC847A/B/C
BC848A/B/C
Marking
1A/1B
1E/1F/1G
1J/1K/1L
Package Code
SOT-23
SOT-23
SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
CBO
Collector-Emitter Voltage
V
CEO
Emitter-Base Voltage
V
EBO
I
C
P
C
T
j,
T
stg
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
Parameter
Collector-Base Voltage
BC846
BC847
BC848
BC846
BC847
BC848
BC846
BC847
BC848
Value
80
50
30
65
45
30
6
6
5
0.1
200
-65~150
Units
V
V
V
A
mW
Document number: BL/SSSTC043
Rev.A
www.galaxycn.com
1

BC846A Related Products

BC846A BC848A BC846 BC847A BC848C BC848B BC847C BC847B BC846B
Description 100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR 100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR 100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR RF SMALL SIGNAL TRANSISTOR TRANSISTOR,BJT,NPN,45V V(BR)CEO,100MA I(C),SOT-23 SMALL SIGNAL TRANSISTOR TRANSISTOR,BJT,NPN,65V V(BR)CEO,100MA I(C),SOT-23
state DISCONTINUED DISCONTINUED ACTIVE ACTIVE ACTIVE ACTIVE CONSULT MFR ACTIVE ACTIVE
Transistor type Universal small signal Universal small signal Universal small signal GENERAL PURPOSE SMALL SIGNAL GENERAL PURPOSE SMALL SIGNAL RF SMALL SIGNAL Universal small signal Universal small signal Universal small signal
Number of terminals 3 3 3 3 3 - - - -
Transistor polarity NPN NPN NPN NPN NPN - - - -
Maximum collector current 0.1000 A 0.1000 A 0.1000 A 0.1000 A 0.1000 A - - - -
Maximum Collector-Emitter Voltage 65 V 65 V 65 V 45 V 30 V - - - -
Processing package description SOT-23, 3 PIN SOT-23, 3 PIN PLASTIC PACKAGE-3 ROHS COMPLIANT PACKAGE-3 ROHS COMPLIANT PACKAGE-3 - - - -
packaging shape Rectangle Rectangle Rectangle RECTANGULAR RECTANGULAR - - - -
Package Size SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE - - - -
surface mount Yes Yes Yes Yes Yes - - - -
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING - - - -
terminal coating tin lead tin lead tin MATTE TIN MATTE TIN - - - -
Terminal location pair pair pair DUAL DUAL - - - -
Packaging Materials Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy PLASTIC/EPOXY PLASTIC/EPOXY - - - -
structure single single single SINGLE SINGLE - - - -
Number of components 1 1 1 1 1 - - - -
transistor applications switch switch switch AMPLIFIER AMPLIFIER - - - -
Transistor component materials silicon silicon silicon SILICON SILICON - - - -
Minimum DC amplification factor 110 110 110 110 420 - - - -
Rated crossover frequency 300 MHz 300 MHz 100 MHz 250 MHz 250 MHz - - - -
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