BQ4015YMB-85N datasheet, PDF - EEWORLD Datasheet

BQ4015YMB-85N: Description512KX8 NON-VOLATILE SRAM, 85ns, DMA32; Categorystorage storage; File Size368KB，16 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/

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BQ4015YMB-85N Overview

512KX8 NON-VOLATILE SRAM, 85ns, DMA32

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	DIP, DIP32,.6
Reach Compliance Code	not_compliant
ECCN code	3A991.B.2.A
Maximum access time	85 ns
JESD-30 code	R-PDIP-T32
memory density	4194304 bit
Memory IC Type	NON-VOLATILE SRAM
memory width	8
Number of terminals	32
word count	524288 words
character code	512000
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	512KX8
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP32,.6
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.005 A
Maximum slew rate	0.115 mA
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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