VS-ST300CL Series
www.vishay.com
Vishay Semiconductors
Phase Control Thyristors
(Hockey PUK Version), 560 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case TO-200AC (B-PUK)
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
TO-200AC (B-PUK)
• DC motor controls
• Controlled DC power supplies
• AC controllers
PRODUCT SUMMARY
Package
Diode variation
I
T(AV)
V
DRM
/V
RRM
V
TM
I
GT
T
J
TO-200AC (B-PUK)
Single SCR
560 A
400 V to 2000 V
2.18 V
100 mA
-40 °C to 125 °C
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
V
DRM
/V
RRM
t
q
T
J
Typical
T
hs
T
hs
50 Hz
60 Hz
50 Hz
60 Hz
TEST CONDITIONS
VALUES
560
55
1115
25
8000
8380
320
292
400 to 2000
100
-40 to 125
UNITS
A
°C
A
°C
A
kA
2
s
V
µs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
08
VS-ST300C..L
12
16
18
20
V
DRM
/V
RRM
, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
400
800
1200
1600
1800
2000
V
RSM
, MAXIMUM
I
DRM
/I
RRM
MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
AT T
J
= T
J
V
MAXIMUM mA
500
900
1300
1700
1900
2100
50
Revision: 15-Apr-14
Document Number: 94405
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST300CL Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
√t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
Maximum holding current
Typical latching current
I
2
√t
V
T(TO)1
V
T(TO)2
r
t1
r
t2
V
TM
I
H
I
L
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
VALUES
560 (275)
55 (75)
1115
8000
8380
6730
Sinusoidal half wave,
initial T
J
= T
J
maximum
7040
320
292
226
207
3200
0.97
0.98
0.74
0.73
2.18
600
1000
kA
2
√s
V
kA
2
s
A
UNITS
A
°C
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
maximum
(I >
π
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
maximum
(I >
π
x I
T(AV)
), T
J
= T
J
maximum
I
pk
= 1635 A, T
J
= T
J
maximum, t
p
= 10 ms sine pulse
T
J
= 25 °C, anode supply 12 V resistive load
mΩ
V
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned-on current
Typical delay time
Typical turn-off time
SYMBOL
dI/dt
t
d
t
q
TEST CONDITIONS
Gate drive 20 V, 20
Ω,
t
r
≤
1 μs
T
J
= T
J
maximum, anode voltage
≤
80 % V
DRM
Gate current 1 A, dI
g
/dt = 1 A/μs
V
d
= 0.67 % V
DRM
, T
J
= 25 °C
I
TM
= 550 A, T
J
= T
J
maximum, dI/dt = 40 A/μs,
V
R
= 50 V, dV/dt = 20 V/μs, gate 0 V 100
Ω,
t
p
= 500 μs
VALUES
1000
1.0
µs
100
UNITS
A/µs
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
SYMBOL
dV/dt
I
RRM,
I
DRM
TEST CONDITIONS
T
J
= T
J
maximum linear to 80 % rated V
DRM
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
VALUES
500
50
UNITS
V/µs
mA
Revision: 15-Apr-14
Document Number: 94405
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST300CL Series
www.vishay.com
Vishay Semiconductors
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
DC gate current required to trigger
SYMBOL
P
GM
P
G(AV)
I
GM
+ V
GM
- V
GM
I
GT
TEST CONDITIONS
T
J
= T
J
maximum, t
p
≤
5 ms
T
J
= T
J
maximum, f = 50 Hz, d% = 50
T
J
= T
J
maximum, t
p
≤
5 ms
T
J
= T
J
maximum, t
p
≤
5 ms
T
J
= - 40 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= - 40 °C
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
V
GT
I
GD
V
GD
T
J
= T
J
maximum
T
J
= 25 °C
T
J
= 125 °C
Maximum gate current/
voltage not to trigger is the
maximum value which will not
trigger any unit with rated V
DRM
anode to cathode applied
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
200
100
50
2.5
1.8
1.1
10.0
0.25
VALUES
TYP.
MAX.
10.0
2.0
3.0
20
5.0
-
200
-
-
3.0
-
mA
V
V
mA
UNITS
W
A
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to heatsink
SYMBOL
T
J
T
Stg
R
thJ-hs
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
TEST CONDITIONS
VALUES
-40 to 125
-40 to 150
0.11
0.05
0.011
0.006
9800
(1000)
250
See dimensions - link at the end of datasheet
N
(kg)
g
K/W
UNITS
°C
Maximum thermal resistance, case to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
R
thC-hs
TO-200AC (B-PUK)
ΔR
thJ-hs
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
SINGLE SIDE
0.012
0.014
0.018
0.026
0.045
DOUBLE SIDE
0.010
0.015
0.018
0.027
0.046
RECTANGULAR CONDUCTION
SINGLE SIDE
0.008
0.014
0.019
0.027
0.046
DOUBLE SIDE
0.008
0.014
0.019
0.028
0.046
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJ-hs
when devices operate at different conduction angles than DC
Revision: 15-Apr-14
Document Number: 94405
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST300CL Series
www.vishay.com
Vishay Semiconductors
Maximum Allowable Heatsink Temperature (°C)
Maximum Allowable Heatsink Temperature (°C)
130
120
110
100
90
80
70
60
50
40
30
0
100
30°
ST300C..L Series
(Single Side Cooled)
R
thJ-hs
(DC) = 0.11 K/W
130
120
110
100
90
80
70
60
50
40
30
20
0
200
30°
ST300C..L Series
(Double Side Cooled)
R
thJ-hs
(DC) = 0.05 K/W
Conduction Period
Conduction Angle
60° 90°
120°
180°
60°
90°
120°
180°
DC
200
300
400
500
400
600
800 1000 1200
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Average On-state Current (A)
Fig. 4 - Current Ratings Characteristics
Maximum Allowable Heatsink Temperature (°C)
130
120
110
100
90
80
70
60
50
40
30
20
0
30°
60°
90°
120°
180°
DC
Conduction Period
Maximum Average On-state Power Loss (W)
ST300C..L Series
(Single Side Cooled)
R
thJ-hs
(DC) = 0.11 K/W
1600
1400
1200
1000
800
600
180°
120°
90°
60°
30°
RMS Limit
Conduction Angle
400
200
0
0
100 200 300 400 500 600 700
Average On-state Current (A)
Fig. 5 - On-State Power Loss Characteristics
ST300C..L Series
T
J
= 125 °C
100 200 300 400 500 600 700
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Maximum Allowable Heatsink Temperature (°C)
Maximum Average On-state Power Loss (W)
130
120
110
100
90
80
70
60
50
40
30
20
0
30°
ST300C..L Series
(Double Side Cooled)
R
thJ-hs
(DC) = 0.05 K/W
1800
Conduction Angle
DC
1600
180°
120°
1400
90°
60°
1200
30°
1000
RMS Limit
800
600
400
200
0
0
200
400
600
800 1000 1200
Average On-state Current (A)
Fig. 6 - On-State Power Loss Characteristics
Conduction Period
60°
90°
120°
180°
ST300C..L Series
T
J
= 125 °C
200
400
600
800
Average On-state Current (A)
Fig. 3 - Current Ratings Characteristics
Revision: 15-Apr-14
Document Number: 94405
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST300CL Series
www.vishay.com
Vishay Semiconductors
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
7500
7000
6500
6000
5500
5000
4500
4000
3500
3000
1
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 125 °C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
8000
7500
7000
6500
6000
5500
5000
4500
4000
3500
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial Tj = 125 °C
No Voltage Reapplied
Rated Vrrm Reapplied
ST300C..L Series
ST300C..L Series
10
100
3000
0.01
0.1
Pulse Train Duration (s)
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10000
Instantaneous On-state Current (A)
T
J
= 25 °C
T
J
= 125 °C
1000
ST300C..L Series
100
0
1
2
3
4
5
6
7
8
9
Instantaneous On-state Voltage (V)
Fig. 9 - On-State Voltage Drop Characteristcs
Transient Thermal Impedance Z
thJ-hs
(K/W)
100
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 μs
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
10
tr<=1 μs
(1) PGM = 10W,
(2) PGM = 20W,
(3) PGM = 40W,
(4) PGM = 60W,
tp = 4ms
tp = 2ms
tp = 1ms
tp = 0.66ms
(a)
(b)
Tj=-40 °C
T j=25 °C
Tj=125 °C
1
VGD
0.1
0.001
(1) (2) (3) (4)
IGD
Device: ST300C..L Series
0.01
0.1
1
Frequency Limited by PG(AV)
10
100
Square Wave Pulse Duration (s)
Fig. 1 - Thermal Impedance Z
thJ-hs
Characteristics
Revision: 15-Apr-14
Document Number: 94405
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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