SPI07N60S5_02 datasheet, PDF - EEWORLD Datasheet

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SPI07N60S5_02: Description7.3 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB; Categorysemiconductor Discrete semiconductor; File Size107KB，10 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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SPI07N60S5_02 Overview

7.3 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

SPI07N60S5_02 Parametric

Parameter Name	Attribute value
Minimum breakdown voltage	600 V
Number of terminals	3
Processing package description	GREEN, PLASTIC, TO-220, 3 PIN
state	Active
Rated avalanche energy	230 mJ
Shell connection	DRAIN
structure	SINGLE WITH BUILT-IN DIODE
Maximum leakage current	7.3 A
Maximum drain on-resistance	0.6000 ohm
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR
jedec_95_code	TO-220AB
jesd_30_code	R-PSFM-T3
jesd_609_code	e3
moisture_sensitivity_level	NOT SPECIFIED
Number of components	1
operating mode	ENHANCEMENT MODE
Packaging Materials	PLASTIC/EPOXY
packaging shape	RECTANGULAR
Package Size	FLANGE MOUNT
eak_reflow_temperature__cel_	NOT SPECIFIED
larity_channel_type	N-CHANNEL
Maximum leakage current pulse	14.6 A
qualification_status	COMMERCIAL
surface mount	NO
terminal coating	TIN
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
ime_peak_reflow_temperature_max__s_	NOT SPECIFIED
Transistor component materials	SILICON
dditional_feature	AVALANCHE RATED

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Final data

SPI07N60S5

SPP07N60S5, SPB07N60S5

Cool MOS™ Power Transistor

•

New revolutionary high voltage technology

•

Ultra low gate charge

•

Periodic avalanche rated

•

Extreme dv/dt rated

•

Optimized capacitances

•

Improved noise immunity

P-TO262

Product Summary

jmax

DS(on)

P-TO263-3-2

650

0.6

7.3

Ω

P-TO220-3-1

Type

SPP07N60S5

SPB07N60S5

SPI07N60S5

Package

P-TO220-3-1

P-TO263-3-2

P-TO262

Ordering Code

Q67040-S4172

Q67040-S4185

Q67040-S4328

Marking

07N60S5

G,1

D,2

S,3

Maximum Ratings,

c = 25°C, unless otherwise specified

Parameter

Continuous drain current

=25°C

=100°C

Symbol

Value

7.3

4.6

Unit

Pulsed drain current

=25°C

D puls

dv/dt

tot

j ,

stg

14.6

230

0.5

7.3

±20

-55... +150

kV/µs

°C

Avalanche energy, single pulse

= 5.5 A,

= 50 V

Avalanche energy (repetitive, limited by

jmax

)

= 7.3 A ,

= 50 V

Avalanche current (repetitive, limited by

jmax

)

Reverse diode dv/dt

=7.3A,

DSS

, di/dt=100A/µs,

jmax

=150°C

Gate source voltage

Power dissipation

=25°C

Operating and storage temperature

2002-07-26

SPI07N60S5_02 Related Products

	SPI07N60S5_02	Q67040-S4185	Q67040-S4328	Q67040-S4172
Description	7.3 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	7.3 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	7.3 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	7.3 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Minimum breakdown voltage	600 V	600 V	600 V	600 V
Number of terminals	3	3	3	3
Processing package description	GREEN, PLASTIC, TO-220, 3 PIN	GREEN, PLASTIC, TO-220, 3 PIN	GREEN, PLASTIC, TO-220, 3 PIN	GREEN, PLASTIC, TO-220, 3 PIN
state	Active	Active	Active	Active
Rated avalanche energy	230 mJ	230 mJ	230 mJ	230 mJ
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN
structure	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Maximum leakage current	7.3 A	7.3 A	7.3 A	7.3 A
Maximum drain on-resistance	0.6000 ohm	0.6000 ohm	0.6000 ohm	0.6000 ohm
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
jedec_95_code	TO-220AB	TO-220AB	TO-220AB	TO-220AB
jesd_30_code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
jesd_609_code	e3	e3	e3	e3
moisture_sensitivity_level	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Number of components	1	1	1	1
operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Packaging Materials	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
packaging shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package Size	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
eak_reflow_temperature__cel_	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
larity_channel_type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum leakage current pulse	14.6 A	14.6 A	14.6 A	14.6 A
qualification_status	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
surface mount	NO	NO	NO	NO
terminal coating	TIN	TIN	TIN	TIN
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
ime_peak_reflow_temperature_max__s_	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON	SILICON
dditional_feature	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED

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