2.4A, 200V, SILICON, RECTIFIER DIODE
| Parameter Name | Attribute value |
| package instruction | O-LALF-W2 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| application | VERY FAST RECOVERY |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 0.94 V |
| JESD-30 code | O-LALF-W2 |
| Maximum non-repetitive peak forward current | 50 A |
| Number of components | 1 |
| Phase | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 175 °C |
| Maximum output current | 2.4 A |
| Package body material | GLASS |
| Package shape | ROUND |
| Package form | LONG FORM |
| Certification status | Not Qualified |
| Maximum repetitive peak reverse voltage | 200 V |
| Maximum reverse current | 1 µA |
| Maximum reverse recovery time | 0.025 µs |
| surface mount | NO |
| technology | AVALANCHE |
| Terminal form | WIRE |
| Terminal location | AXIAL |
| Base Number Matches | 1 |
| BYD74D | BYD74A | BYD74E | BYD74G | BYD74B | BYD74C | BYD74F | |
|---|---|---|---|---|---|---|---|
| Description | 2.4A, 200V, SILICON, RECTIFIER DIODE | 2.4A, 50V, SILICON, RECTIFIER DIODE | DIODE 2.15 A, 250 V, SILICON, RECTIFIER DIODE, Rectifier Diode | 2.15A, 400V, SILICON, RECTIFIER DIODE | 2.4A, 100V, SILICON, RECTIFIER DIODE | 2.4A, 150V, SILICON, RECTIFIER DIODE | 2.15A, 300V, SILICON, RECTIFIER DIODE |
| Reach Compliance Code | compliant | compliant | compliant | compliant | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| application | VERY FAST RECOVERY | VERY FAST RECOVERY | VERY FAST RECOVERY | VERY FAST RECOVERY | VERY FAST RECOVERY | VERY FAST RECOVERY | VERY FAST RECOVERY |
| Shell connection | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Diode component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Diode type | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 0.94 V | 0.94 V | 1.05 V | 1.05 V | 0.94 V | 0.94 V | 1.05 V |
| JESD-30 code | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 |
| Maximum non-repetitive peak forward current | 50 A | 50 A | 50 A | 50 A | 50 A | 50 A | 50 A |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Phase | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 2 | 2 | 2 | 2 | 2 | 2 | 2 |
| Maximum operating temperature | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C |
| Maximum output current | 2.4 A | 2.4 A | 2.15 A | 2.15 A | 2.4 A | 2.4 A | 2.15 A |
| Package body material | GLASS | GLASS | GLASS | GLASS | GLASS | GLASS | GLASS |
| Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
| Package form | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum repetitive peak reverse voltage | 200 V | 50 V | 250 V | 400 V | 100 V | 150 V | 300 V |
| Maximum reverse current | 1 µA | 1 µA | 1 µA | 1 µA | 1 µA | 1 µA | 1 µA |
| Maximum reverse recovery time | 0.025 µs | 0.025 µs | 0.05 µs | 0.05 µs | 0.025 µs | 0.025 µs | 0.05 µs |
| surface mount | NO | NO | NO | NO | NO | NO | NO |
| technology | AVALANCHE | AVALANCHE | AVALANCHE | AVALANCHE | AVALANCHE | AVALANCHE | AVALANCHE |
| Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
| Terminal location | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL |
| package instruction | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | - | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 |
| Maker | - | NXP | NXP | - | - | NXP | NXP |