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BZW50-56BRL

Description
5000W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, R6, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size169KB,5 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance  
Download Datasheet Parametric View All

BZW50-56BRL Overview

5000W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, R6, 2 PIN

BZW50-56BRL Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionO-PALF-W2
Contacts2
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresUL RECOGNIZED
Minimum breakdown voltage62.2 V
Shell connectionISOLATED
Maximum clamping voltage99.6 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-PALF-W2
JESD-609 codee3
Maximum non-repetitive peak reverse power dissipation5000 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityBIDIRECTIONAL
Maximum power dissipation6.5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage56 V
surface mountNO
technologyAVALANCHE
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
®
BZW50-10,B/180,B
TRANSIL
TM
FEATURES
s
s
s
s
s
s
PEAK PULSE POWER : 5000 W (10/1000µs)
STAND-OFF VOLTAGE RANGE :
From 10V to 180V
UNI AND BIDIRECTIONAL TYPES
LOW CLAMPING FACTOR
FAST RESPONSE TIME
UL RECOGNIZED
DESCRIPTION
Transil diodes provide high overvoltage protection
by clamping action. Their instantaneous response
to transient overvoltages makes them particu-
larly suited to protect voltage sensitive devices
such as MOS Technology and low voltage sup-
plied IC’s.
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25°C)
Symbol
P
PP
P
I
FSM
T
stg
T
j
T
L
Parameter
Peak pulse power dissipation (see note 1)
Power dissipation on infinite heatsink
Non repetitive surge peak forward current
for unidirectional types
Storage temperature range
Maximum junction temperature
Maximum lead temperature for soldering during 10s at 5mm
from case
Tj initial = T
amb
T
amb
= 75°C
tp = 10ms
Tj initial = T
amb
Value
5000
6.5
500
- 65 to + 175
175
230
Unit
W
W
A
°C
°C
°C
R6
Note 1
: For a surge greater than the maximum values, the diode will fail in short-circuit.
THERMAL RESISTANCES
Symbol
R
th (j-l)
R
th (j-a)
Junction to leads
Junction to ambient on printed circuit.
L
lead
= 10 mm
Parameter
Value
15
65
Unit
°C/W
°C/W
February 2003- Ed : 4A
1/5
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