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M29W128GH60N6E

Description
8K X 16 FLASH 3V PROM, 70 ns, PDSO56
Categorystorage    storage   
File Size2MB,94 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Environmental Compliance
Download Datasheet Parametric View All

M29W128GH60N6E Overview

8K X 16 FLASH 3V PROM, 70 ns, PDSO56

M29W128GH60N6E Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNumonyx ( Micron )
Parts packaging codeTSOP
package instructionTSOP1, TSSOP56,.8,20
Contacts56
Reach Compliance Codeunknow
ECCN code3A991.B.1.A
Maximum access time60 ns
Spare memory width8
command user interfaceYES
Universal Flash InterfaceYES
Data pollingYES
JESD-30 codeR-PDSO-G56
length18.4 mm
memory density134217728 bi
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size128
Number of terminals56
word count8388608 words
character code8000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize8MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Encapsulate equivalent codeTSSOP56,.8,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
page size8/16 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3/3.3 V
Programming voltage3 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height1.2 mm
Department size128K
Maximum standby current0.0001 A
Maximum slew rate0.02 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitYES
typeNOR TYPE
width14 mm
M29W128GH
M29W128GL
128 Mbit (16 Mb x 8 or 8 Mb x 16, page, uniform block)
3 V supply Flash memory
Features
Supply voltage
– V
CC
= 2.7 to 3.6 V for Program, Erase and
Read
– V
CCQ
= 1.65 to 3.6 V for I/O buffers
– V
PPH
= 12 V for Fast Program (optional)
Asynchronous Random/Page Read
– Page size: 8 words or 16 bytes
– Page access: 25, 30 ns
– Random access: 60 (only available upon
customer request) or 70, 80 ns
Fast Program commands
– 32 words (64-byte write buffer)
Enhanced Buffered Program commands
– 256 words
Programming time
– 16 µs per byte/word typical
– Chip program time: 5 s with V
PPH
and 8 s
without V
PPH
Memory organization
– M29128GH/L: 128 main blocks,
128 Kbytes/64 Kwords each
Program/Erase controller
– Embedded byte/word program algorithms
Program/ Erase Suspend and Resume
– Read from any block during Program
Suspend
– Read and Program another block during
Erase Suspend
TSOP56 (N)
14 x 20 mm
BGA
TBGA64 (ZA)
10 x 13 mm
– Faster Production/Batch Programming
– Faster Block and Chip Erase
V
PP
/WP pin for Fast Program and Write:
protects first or last block regardless of block
protection settings
Software protection:
– Volatile protection
– Non-volatile protection
– Password protection
Common Flash interface
– 64 bit security code
128 word extended memory block
– Extra block used as security block or to
store additional information
Low power consumption
– Standby and automatic standby
Minimum 100,000 Program/Erase cycles per
block
ECOPACK
®
packages
Unlock Bypass/Block Erase/Chip Erase/Write
to Buffer/Enhanced Buffered Program
commands
Table 1.
Device summary
Root part number
M29W128GH: uniform, last block protected by V
PP
/WP
M29W128GL: uniform, first block protected by V
PP
/WP
Device code
227Eh + 2221h + 2201h
227Eh + 2221h + 2200h
March 2008
Rev 4
1/94
www.numonyx.com
1

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