M36P0R8070E0ZACE datasheet, PDF

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M36P0R8070E0ZACE: Description256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package; Categorystorage storage; File Size593KB，22 Pages; ManufacturerNumonyx ( Micron ); Websitehttps://www.micron.com; Environmental Compliance

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M36P0R8070E0ZACE Overview

256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package

M36P0R8070E0ZACE Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Numonyx ( Micron )
Parts packaging code	BGA
package instruction	TFBGA, BGA107,9X12,32
Contacts	107
Reach Compliance Code	unknow
Maximum access time	93 ns
Other features	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; PSRAM IS ORGANISED AS 8M X 16
JESD-30 code	R-PBGA-B107
length	11 mm
memory density	268435456 bi
Memory IC Type	MEMORY CIRCUIT
memory width	16
Mixed memory types	FLASH+PSRAM
Number of functions	1
Number of terminals	107
word count	16777216 words
character code	16000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-30 °C
organize	16MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA107,9X12,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	1.8 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	1.95 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	8 mm
Base Number Matches	1

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M36P0R8070E0

256 Mbit (x16, multiple bank, multilevel, burst) Flash memory

128 Mbit (burst) PSRAM, 1.8 V supply, multichip package

Features

■

Multichip package

– 1 die of 256 Mbit (16 Mb x 16, multiple

bank, multilevel, burst) Flash memory

– 1 die of 128 Mbit (8 Mb x16) PSRAM

Supply voltage

– V

DDF

= V

CCP

= V

DDQ

= 1.7 to 1.95 V

– V

PPF

= 9 V for fast program (12 V tolerant)

Electronic signature

– Manufacturer code: 20h

– Device code: 8818

Package

– ECOPACK®

Synchronous/asynchronous read

– Synchronous burst read mode:

108 MHz, 66 MHz

– Asynchronous page read mode

– Random access: 93 ns

Programming time

– 4 µs typical Word program time using

Buffer Enhanced Factory Program

command

Memory organization

– Multiple bank memory array: 32 Mbit banks

– Four EFA (extended flash array) blocks of

64 Kbits

Dual operations

– Program/erase in one bank while read in

others

– No delay between read and write

operations

Security

– 64bit unique device number

– 2112 bit user programmable OTP Cells

100 000 program/erase cycles per block

■

FBGA

■

TFBGA107 (ZAC)

■

Flash memory

■

Block locking

– All blocks locked at power-up

– Any combination of blocks can be locked

with zero latency

– WP

for block lock-down

– Absolute write protection with V

PPF

= V

CFI (common Flash interface)

Access time: 70 ns

Asynchronous page read

– Page size: 4, 8 or 16 words

– Subsequent read within page: 20 ns

Synchronous burst read/write

Low power consumption

– Active current: < 25 mA

– Standby current: 200 µA

– Deep power-down current: 10 µA

Low power features

– PASR (partial array self refresh)

– DPD (deep power-down) mode

■

PSRAM

■

December 2007

Rev 2

1/22

www.numonyx.com

M36P0R8070E0ZACE Related Products

	M36P0R8070E0ZACE	M36P0R8070E0	M36P0R8070E0ZACF
Description	256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package	256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package	256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package
Is it Rohs certified?	conform to	-	conform to
Maker	Numonyx ( Micron )	-	Numonyx ( Micron )
Parts packaging code	BGA	-	BGA
package instruction	TFBGA, BGA107,9X12,32	-	TFBGA, BGA107,9X12,32
Contacts	107	-	107
Reach Compliance Code	unknow	-	unknow
Maximum access time	93 ns	-	93 ns
Other features	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; PSRAM IS ORGANISED AS 8M X 16	-	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; PSRAM IS ORGANISED AS 8M X 16
JESD-30 code	R-PBGA-B107	-	R-PBGA-B107
length	11 mm	-	11 mm
memory density	268435456 bi	-	268435456 bi
Memory IC Type	MEMORY CIRCUIT	-	MEMORY CIRCUIT
memory width	16	-	16
Mixed memory types	FLASH+PSRAM	-	FLASH+PSRAM
Number of functions	1	-	1
Number of terminals	107	-	107
word count	16777216 words	-	16777216 words
character code	16000000	-	16000000
Operating mode	ASYNCHRONOUS	-	ASYNCHRONOUS
Maximum operating temperature	85 °C	-	85 °C
Minimum operating temperature	-30 °C	-	-30 °C
organize	16MX16	-	16MX16
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY
encapsulated code	TFBGA	-	TFBGA
Encapsulate equivalent code	BGA107,9X12,32	-	BGA107,9X12,32
Package shape	RECTANGULAR	-	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH	-	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	NOT SPECIFIED
power supply	1.8 V	-	1.8 V
Certification status	Not Qualified	-	Not Qualified
Maximum seat height	1.2 mm	-	1.2 mm
Maximum supply voltage (Vsup)	1.95 V	-	1.95 V
Minimum supply voltage (Vsup)	1.7 V	-	1.7 V
Nominal supply voltage (Vsup)	1.8 V	-	1.8 V
surface mount	YES	-	YES
technology	CMOS	-	CMOS
Temperature level	OTHER	-	OTHER
Terminal form	BALL	-	BALL
Terminal pitch	0.8 mm	-	0.8 mm
Terminal location	BOTTOM	-	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED
width	8 mm	-	8 mm

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