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M36P0R8070E0ZACF

Description
256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package
Categorystorage    storage   
File Size593KB,22 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Environmental Compliance
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M36P0R8070E0ZACF Overview

256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package

M36P0R8070E0ZACF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNumonyx ( Micron )
Parts packaging codeBGA
package instructionTFBGA, BGA107,9X12,32
Contacts107
Reach Compliance Codeunknow
Maximum access time93 ns
Other featuresSYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; PSRAM IS ORGANISED AS 8M X 16
JESD-30 codeR-PBGA-B107
length11 mm
memory density268435456 bi
Memory IC TypeMEMORY CIRCUIT
memory width16
Mixed memory typesFLASH+PSRAM
Number of functions1
Number of terminals107
word count16777216 words
character code16000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-30 °C
organize16MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA107,9X12,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply1.8 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width8 mm
M36P0R8070E0
256 Mbit (x16, multiple bank, multilevel, burst) Flash memory
128 Mbit (burst) PSRAM, 1.8 V supply, multichip package
Features
Multichip package
– 1 die of 256 Mbit (16 Mb x 16, multiple
bank, multilevel, burst) Flash memory
– 1 die of 128 Mbit (8 Mb x16) PSRAM
Supply voltage
– V
DDF
= V
CCP
= V
DDQ
= 1.7 to 1.95 V
– V
PPF
= 9 V for fast program (12 V tolerant)
Electronic signature
– Manufacturer code: 20h
– Device code: 8818
Package
– ECOPACK®
Synchronous/asynchronous read
– Synchronous burst read mode:
108 MHz, 66 MHz
– Asynchronous page read mode
– Random access: 93 ns
Programming time
– 4 µs typical Word program time using
Buffer Enhanced Factory Program
command
Memory organization
– Multiple bank memory array: 32 Mbit banks
– Four EFA (extended flash array) blocks of
64 Kbits
Dual operations
– Program/erase in one bank while read in
others
– No delay between read and write
operations
Security
– 64bit unique device number
– 2112 bit user programmable OTP Cells
100 000 program/erase cycles per block
FBGA
TFBGA107 (ZAC)
Flash memory
Block locking
– All blocks locked at power-up
– Any combination of blocks can be locked
with zero latency
– WP
F
for block lock-down
– Absolute write protection with V
PPF
= V
SS
CFI (common Flash interface)
Access time: 70 ns
Asynchronous page read
– Page size: 4, 8 or 16 words
– Subsequent read within page: 20 ns
Synchronous burst read/write
Low power consumption
– Active current: < 25 mA
– Standby current: 200 µA
– Deep power-down current: 10 µA
Low power features
– PASR (partial array self refresh)
– DPD (deep power-down) mode
PSRAM
December 2007
Rev 2
1/22
www.numonyx.com
1

M36P0R8070E0ZACF Related Products

M36P0R8070E0ZACF M36P0R8070E0 M36P0R8070E0ZACE
Description 256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package 256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package 256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package
Is it Rohs certified? conform to - conform to
Maker Numonyx ( Micron ) - Numonyx ( Micron )
Parts packaging code BGA - BGA
package instruction TFBGA, BGA107,9X12,32 - TFBGA, BGA107,9X12,32
Contacts 107 - 107
Reach Compliance Code unknow - unknow
Maximum access time 93 ns - 93 ns
Other features SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; PSRAM IS ORGANISED AS 8M X 16 - SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; PSRAM IS ORGANISED AS 8M X 16
JESD-30 code R-PBGA-B107 - R-PBGA-B107
length 11 mm - 11 mm
memory density 268435456 bi - 268435456 bi
Memory IC Type MEMORY CIRCUIT - MEMORY CIRCUIT
memory width 16 - 16
Mixed memory types FLASH+PSRAM - FLASH+PSRAM
Number of functions 1 - 1
Number of terminals 107 - 107
word count 16777216 words - 16777216 words
character code 16000000 - 16000000
Operating mode ASYNCHRONOUS - ASYNCHRONOUS
Maximum operating temperature 85 °C - 85 °C
Minimum operating temperature -30 °C - -30 °C
organize 16MX16 - 16MX16
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
encapsulated code TFBGA - TFBGA
Encapsulate equivalent code BGA107,9X12,32 - BGA107,9X12,32
Package shape RECTANGULAR - RECTANGULAR
Package form GRID ARRAY, THIN PROFILE, FINE PITCH - GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED
power supply 1.8 V - 1.8 V
Certification status Not Qualified - Not Qualified
Maximum seat height 1.2 mm - 1.2 mm
Maximum supply voltage (Vsup) 1.95 V - 1.95 V
Minimum supply voltage (Vsup) 1.7 V - 1.7 V
Nominal supply voltage (Vsup) 1.8 V - 1.8 V
surface mount YES - YES
technology CMOS - CMOS
Temperature level OTHER - OTHER
Terminal form BALL - BALL
Terminal pitch 0.8 mm - 0.8 mm
Terminal location BOTTOM - BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED
width 8 mm - 8 mm

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