DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
BSS192
P-channel enhancement mode
vertical D-MOS transistor
Product specification
Supersedes data of 1997 Jun 20
2002 May 22
Philips Semiconductors
Product specification
P-channel enhancement mode
vertical D-MOS transistor
FEATURES
•
Direct interface to C-MOS, TTL, etc.
•
High-speed switching
•
No secondary breakdown.
APPLICATIONS
•
Line current interrupter in telephone sets
•
Relay, high-speed and line transformer drivers.
DESCRIPTION
P-channel enhancement mode vertical D-MOS transistor
in a SOT89 package.
1
Bottom view
2
3
MAM354
BSS192
PINNING - SOT89
PIN
1
2
3
SYMBOL
s
d
g
drain
gate
DESCRIPTION
source
handbook, halfpage
d
g
s
Marking code:
KB.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
V
DS
V
GSth
I
D
R
DSon
PARAMETER
drain-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
I
D
=
−200
mA; V
GS
=
−10
V
I
D
=
−1
mA; V
GS
= V
DS
CONDITIONS
MAX.
−240
−2.8
−200
12
V
V
mA
Ω
UNIT
2002 May 22
2
Philips Semiconductors
Product specification
P-channel enhancement mode
vertical D-MOS transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
DS
V
GSO
I
D
I
DM
P
tot
T
stg
T
j
Note
1. Device mounted on a ceramic substrate; area 2.5 cm
2
; thickness 0.7 mm.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Device mounted on a ceramic substrate; area 2.5 cm
2
; thickness 0.7 mm.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)DSS
V
GSth
I
DSS
I
GSS
R
DSon
y
fs
C
iss
C
oss
C
rss
t
on
t
off
PARAMETER
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate leakage current
drain-source on-state resistance
forward transfer admittance
input capacitance
output capacitance
reverse transfer capacitance
CONDITIONS
V
GS
= 0; I
D
=
−10 µA
V
GS
= V
DS
; I
D
=
−1
mA
V
GS
= 0; V
DS
=
−60
V
V
GS
=
−0.2
V; V
DS
=
−200
V
V
DS
= 0; V
GS
=
±20
V
V
GS
=
−10
V; I
D
=
−200
mA
V
DS
=
−25
V; I
D
=
−200
mA
V
GS
= 0; V
DS
=
−25
V; f = 1 MHz
V
GS
= 0; V
DS
=
−25
V; f = 1 MHz
V
GS
= 0; V
DS
=
−25
V; f = 1 MHz
V
GS
= 0 to
−10
V; V
DD
=
−50
V;
I
D
=
−250
mA
V
GS
=
−10
to 0 V; V
DD
=
−50
V;
I
D
=
−250
mA
MIN.
−240
−0.8
−
−
−
−
60
−
−
−
−
−
TYP.
−
−
−
−0.1
−
10
200
55
20
5
PARAMETER
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
125
PARAMETER
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
junction temperature
T
amb
≤
25
°C;
note 1
open drain
CONDITIONS
−
−
−
−
−
−65
−
MIN.
BSS192
MAX.
−240
±20
−200
−600
1
+150
150
V
V
UNIT
mA
mA
W
°C
°C
UNIT
K/W
MAX. UNIT
−
−2.8
−200
−60
±100
12
−
90
30
15
V
V
nA
µA
nA
Ω
mS
pF
pF
pF
Switching times
(see Figs 2 and 3)
turn-on time
turn-off time
5
20
10
30
ns
ns
2002 May 22
3
Philips Semiconductors
Product specification
P-channel enhancement mode
vertical D-MOS transistor
BSS192
handbook, halfpage
VDD =
−50
V
handbook, halfpage
10 %
INPUT
90 %
10 %
0V
−10
V
ID
50
Ω
MBB689
OUTPUT
90 %
ton
toff
MBB690
Fig.2 Switching times test circuit.
Fig.3 Input and output waveforms.
handbook, halfpage
1.2
MLC697
handbook, halfpage
160
MDA180
Ptot
(W)
C
(pF)
120
0.8
80
(1)
0.4
40
(2)
(3)
0
0
50
100
150
200
Tamb (°C)
0
0
−5
−10
−15
−20
−25
VDS (V)
V
GS
= 0; T
j
= 25
°C;
f = 1 MHz.
(1) C
iss
.
(2) C
oss
.
(3) C
rss
.
Fig.5
Fig.4 Power derating curve.
Capacitance as a function of drain-source
voltage; typical values.
2002 May 22
4
Philips Semiconductors
Product specification
P-channel enhancement mode
vertical D-MOS transistor
BSS192
handbook, halfpage
−1
MDA177
ID
(1)
(2)
handbook, halfpage
−1
MDA178
ID
(A)
−0.8
(A)
−0.8
−0.6
(3)
−0.6
−0.4
(4)
−0.4
−0.2
(5)
−0.2
0
0
−5
−10
−15
−20
−25
VDS (V)
0
0
−2
−4
−6
−8
−10
VGS (V)
T
j
= 25
°C.
(1) V
GS
=
−10
V.
(2) V
GS
=
−6
V.
(3) V
GS
=
−5
V.
(4) V
GS
=
−4
V.
(5) V
GS
=
−3
V.
V
DS
=
−10
V; T
j
= 25
°C.
Fig.6 Output characteristics; typical values.
Fig.7 Transfer characteristic; typical values.
−10
3
handbook, halfpage
MDA179
(1)
(2)
handbook, halfpage
1.2
k
MDA182
ID
(mA)
(3)
1.1
1
−10
2
0.9
0.8
−10
8
12
16
20
24
28
RDSon (Ω)
0.7
−50
0
50
100
Tj (
o
C)
150
T
j
= 25
°C.
(1) V
GS
=
−10
V.
(2) V
GS
=
−5
V.
(3) V
GS
=
−4
V.
V
GSth
at T
j
k
=
-------------------------------------
-
V
GSth
at 25°C
V
GSth
at I
D
=
−1
mA.
Fig.8
Drain current as a function of drain-source
on-state resistance; typical values.
Fig.9
Temperature coefficient of gate-source
threshold voltage; typical values.
2002 May 22
5
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