Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
NXP Semiconductors
Product data sheet
NPN general purpose transistors
FEATURES
•
Low current (100 mA)
•
Low voltage (45 V)
•
Low noise.
APPLICATIONS
•
General purpose switching and amplification.
DESCRIPTION
handbook, halfpage
BCW71; BCW72
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complements: BCW69 and BCW70.
MARKING
TYPE NUMBER
BCW71
BCW72
Note
1.
∗
= p : Made in Hong Kong.
∗
= t : Made in Malaysia.
MARKING CODE
(1)
K1∗
K2∗
Top view
3
3
1
2
1
2
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
CONDITIONS
open emitter
open base; I
C
= 2 mA
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
50
45
5
100
200
200
250
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT
1999 Apr 19
2
NXP Semiconductors
Product data sheet
NPN general purpose transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
BCW71
BCW72
DC current gain
BCW71
BCW72
V
CEsat
V
BEsat
V
BE
C
c
f
T
F
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter voltage
collector capacitance
transition frequency
noise figure
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 50 mA; I
B
= 2.5 mA
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 50 mA; I
B
= 2.5 mA
I
C
= 2 mA; V
CE
= 5 V
I
E
= I
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz
I
C
= 200
μA;
V
CE
= 5 V; R
S
= 2 kΩ;
f = 1 kHz; B = 200 Hz
I
C
= 2 mA; V
CE
= 5 V
110
200
−
−
−
−
550
−
100
−
CONDITIONS
I
E
= 0; V
CB
= 20 V
I
E
= 0; V
CB
= 20 V; T
j
= 100
°C
I
C
= 0; V
EB
= 5 V
I
C
= 10
μA;
V
CE
= 5 V
−
−
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
BCW71; BCW72
VALUE
500
UNIT
K/W
MIN.
−
−
−
TYP.
−
−
−
90
150
−
−
120
210
750
850
−
2.5
−
−
MAX.
100
10
100
−
−
220
450
250
−
−
−
700
−
−
10
UNIT
nA
μA
μA
mV
mV
mV
mV
mV
pF
MHz
dB
1999 Apr 19
3
NXP Semiconductors
Product data sheet
NPN general purpose transistors
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
BCW71; BCW72
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
TO-236AB
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
1999 Apr 19
4
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