HM62W8512A Series
524288-word
×
8-bit High Speed CMOS Static RAM
ADE-203-641 (Z)
Preliminary
Rev. 0.0
Oct. 3, 1996
Description
The Hitachi HM62W8512A is a 4-Mbit static RAM organized 512-kword
×
8-bit. It realizes higher density,
higher performance and low power consumption by employing 0.5
µm
Hi-CMOS process technology. The
device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II is available for high
density mounting. The HM62W8512A is suitable for battery backup system.
Features
•
Single 3.3 V supply
•
Access time: 70/85 ns (max)
•
Power dissipation
Active: 36 mW/MHz (max)
Standby: 4
µW
(typ)
•
Completely static memory. No clock or timing strobe required
•
Equal access and cycle times
•
Common data input and output: Three state output
•
Directly LV-TTL compatible: All inputs and outputs
•
Battery backup operation
Preliminary: This document contains information on a new product. Specifications and information
contained herein are subject to change without notice.
HM62W8512A Series
Ordering Information
Type No.
HM62W8512ALFP-7
HM62W8512ALFP-8
Access time
70 ns
85 ns
Package
525-mil 32-pin plastic SOP (FP-32D)
HM62W8512ALFP-7SL 70 ns
HM62W8512ALFP-8SL 85 ns
HM62W8512ALTT-7
HM62W8512ALTT-8
HM62W8512ALTT-7SL
HM62W8512ALTT-8SL
HM62W8512ALRR-7
HM62W8512ALRR-8
70 ns
85 ns
70 ns
85 ns
70 ns
85 ns
400-mil 32-pin plastic TSOP II reverse (TTP-32DR)
400-mil 32-pin plastic TSOP II (TTP-32D)
HM62W8512ALRR-7SL 70 ns
HM62W8512ALRR-8SL 85 ns
2
HM62W8512A Series
Function Table
WE
×
H
H
L
L
CS
H
L
L
L
L
OE
×
H
L
H
L
Mode
Not selected
Output disable
Read
Write
Write
V
CC
current
I
SB
, I
SB1
I
CC
I
CC
I
CC
I
CC
Dout pin
High-Z
High-Z
Dout
Din
Din
Ref. cycle
—
—
Read cycle
Write cycle (1)
Write cycle (2)
Note:
×:
H or L
Absolute Maximum Ratings
Parameter
Power supply voltage
Voltage on any pin relative to V
SS
Power dissipation
Operating temperature
Storage temperature
Storage temperature under bias
Symbol
V
CC
V
T
P
T
Topr
Tstg
Tbias
Value
–0.5 to +4.6
–0.5*
1
to V
CC
+ 0.5*
2
1.0
0 to +70
–55 to +125
–10 to +85
Unit
V
V
W
°C
°C
°C
Notes: 1. –3.0 V for pulse half-width
≤
30 ns
2. Maximum voltage is 4.6 V
Recommended DC Operating Conditions
(Ta = 0 to +70°C)
Parameter
Supply voltage
Symbol
V
CC
V
SS
Input high voltage
Input low voltage
Note:
V
IH
V
IL
Min
3.0
0
2.0
–0.3*
1
Typ
3.3
0
—
—
Max
3.6
0
V
CC
+ 0.3
0.8
Unit
V
V
V
V
1. –3.0 V for pulse half-width
≤
30 ns
5
京公网安备 11010802033920号
EEWORLD
