Si2303BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
b
Pulsed Drain Current
a
Continuous Source Current (Diode Conduction)
b
Power Dissipation
b
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
- 0.75
0.9
0.57
- 55 to 150
- 1.64
- 1.31
- 10
- 0.6
0.7
0.45
W
°C
5s
Steady State
- 30
± 20
- 1.49
- 1.2
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b
Maximum Junction-to-Ambient
c
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 board, t
≤
5 s.
c. Surface Mounted on FR4 board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Symbol
R
thJA
Typical
120
140
Maximum
145
175
Unit
°C/W
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72065
S-80642-Rev. C, 24-Mar-08
www.vishay.com
1
Si2303BDS
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Limits
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-Resistance
a
Forward Transconductance
a
Diode Forward Voltage
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
c
Turn-On Time
Turn-Off Time
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 15 V, R
L
= 15
Ω
I
D
≅
- 1.0 A, V
GEN
= - 4.5 V
R
G
= 6
Ω
55
40
10
10
80
60
20
20
ns
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
V
DS
= - 15 V, V
GS
= 0 V, f = 1 MHz
V
DS
= - 15 V, V
GS
= - 10 V, I
D
≅
- 1.7 A
4.3
0.8
1.3
180
50
35
pF
10
nC
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
GS
= 0 V, I
D
= - 10 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= - 30 V, V
GS
= 0 V
V
DS
= - 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≤
- 5 V, V
GS
= - 10 V
V
GS
= - 10 V, I
D
= - 1.7 A
V
GS
= - 4.5 V, I
D
= - 1.3 A
V
DS
= - 5 V, I
D
= - 1.7 A
I
S
= - 0.75 A, V
GS
= 0 V
-6
0.150
0.285
2.0
- 0.85
- 1.2
0.200
0.380
- 30
- 1.0
- 3.0
± 100
-1
- 10
V
nA
µA
A
Ω
S
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test: PW
≤
300 µs, duty cycle
≤
2 %.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
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