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EDE5108AGSE-5C-E

Description
512MB Fully Buffered DIMM
Categorystorage    storage   
File Size154KB,22 Pages
ManufacturerELPIDA
Websitehttp://www.elpida.com/en
Environmental Compliance
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EDE5108AGSE-5C-E Overview

512MB Fully Buffered DIMM

EDE5108AGSE-5C-E Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerELPIDA
Parts packaging codeBGA
package instructionTFBGA, BGA60,9X11,32
Contacts60
Reach Compliance Codeunknow
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time0.5 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)266 MHz
I/O typeCOMMON
interleaved burst length4,8
JESD-30 codeR-PBGA-B60
JESD-609 codee1
length11.5 mm
memory density536870912 bi
Memory IC TypeDDR DRAM
memory width8
Number of functions1
Number of ports1
Number of terminals60
word count67108864 words
character code64000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature
organize64MX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA60,9X11,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)260
power supply1.8 V
Certification statusNot Qualified
refresh cycle8192
Maximum seat height1.2 mm
self refreshYES
Continuous burst length4,8
Maximum standby current0.01 A
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width11 mm
PRELIMINARY DATA SHEET
512MB Fully Buffered DIMM
EBE51FD8AGFD
EBE51FD8AGFN
Specifications
Density: 512MB
Organization
64M words
×
72 bits, 1 rank
Mounting 9 pieces of 512M bits DDR2 SDRAM
sealed in FBGA
Package
240-pin fully buffered, socket type dual in line
memory module (FB-DIMM)
PCB height: 30.35mm
Lead pitch: 1.00mm
Advanced Memory Buffer (AMB): 655-ball FCBGA
Lead-free (RoHS compliant)
Power supply
DDR2 SDRAM: VDD
=
1.8V
±
0.1V
AMB: VCC
=
1.5V
+
0.075V/−0.045
Data rate: 667Mbps/533Mbps (max.)
Four internal banks for concurrent operation
(components)
Interface: SSTL_18
Burst lengths (BL): 4, 8
/CAS Latency (CL): 3, 4, 5
Precharge: auto precharge option for each burst
access
Refresh: auto-refresh, self-refresh
Refresh cycles: 8192 cycles/64ms
Average refresh period
7.8µs at 0°C
TC
≤ +85°C
3.9µs at
+85°C <
TC
≤ +95°C
Operating case temperature range
TC = 0°C to +95°C
Features
JEDEC standard Raw Card A Design
Industry Standard Advanced Memory Buffer (AMB)
High-speed differential point-to-point link interface at
1.5V (JEDEC draft spec)
14 north-bound (NB) high speed serial lanes
10 south-bound (SB) high speed serial lanes
Various features/modes:
MemBIST and IBIST test functions
Transparent mode and direct access mode for
DRAM testing
Interface for a thermal sensor and status indicator
Channel error detection and reporting
Automatic DDR2 SDRAM bus and channel
calibration
SPD (serial presence detect) with 1piece of 256 byte
serial EEPROM
Note: Warranty void if removed DIMM heat
spreader.
Performance
FB-DIMM
System clock
frequency
167MHz
133MHz
Speed grade
PC2-5300F
PC2-4200F
Peak channel
throughput
8.0GByte/s
6.4GByte/s
FB-DIMM link data rate
4.0Gbps
3.2Gbps
DDR2 SDRAM
Speed Grade
DDR2-667 (5-5-5)
DDR2-533 (4-4-4)
DDR data rate
667Mbps
533Mbps
Document No. E0869E30 (Ver. 3.0)
Date Published August 2006 (K) Japan
Printed in Japan
URL: http://www.elpida.com
Elpida
Memory, Inc. 2006

EDE5108AGSE-5C-E Related Products

EDE5108AGSE-5C-E EDE5108AGSE-6E-E EBE51FD8AGFD EBE51FD8AGFN EBE51FD8AGFD-6E-E EBE51FD8AGFN-6E-E
Description 512MB Fully Buffered DIMM 512MB Fully Buffered DIMM 512MB Fully Buffered DIMM 512MB Fully Buffered DIMM 512MB Fully Buffered DIMM 512MB Fully Buffered DIMM
Maker ELPIDA ELPIDA - - ELPIDA ELPIDA
Parts packaging code BGA BGA - - DIMM DIMM
package instruction TFBGA, BGA60,9X11,32 TFBGA, BGA60,9X11,32 - - DIMM, DIMM,
Contacts 60 60 - - 240 240
Reach Compliance Code unknow unknow - - unknow unknow
ECCN code EAR99 EAR99 - - EAR99 EAR99
access mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST - - SINGLE BANK PAGE BURST SINGLE BANK PAGE BURST
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH - - AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 code R-PBGA-B60 R-PBGA-B60 - - R-XDMA-N240 R-XDMA-N240
memory density 536870912 bi 536870912 bi - - 4831838208 bi 4831838208 bi
Memory IC Type DDR DRAM DDR DRAM - - DDR DRAM MODULE DDR DRAM MODULE
memory width 8 8 - - 72 72
Number of functions 1 1 - - 1 1
Number of ports 1 1 - - 1 1
Number of terminals 60 60 - - 240 240
word count 67108864 words 67108864 words - - 67108864 words 67108864 words
character code 64000000 64000000 - - 64000000 64000000
Operating mode SYNCHRONOUS SYNCHRONOUS - - SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 85 °C 85 °C - - 85 °C 85 °C
organize 64MX8 64MX8 - - 64MX72 64MX72
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - - UNSPECIFIED UNSPECIFIED
encapsulated code TFBGA TFBGA - - DIMM DIMM
Package shape RECTANGULAR RECTANGULAR - - RECTANGULAR RECTANGULAR
Package form GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH - - MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Certification status Not Qualified Not Qualified - - Not Qualified Not Qualified
self refresh YES YES - - YES YES
Maximum supply voltage (Vsup) 1.9 V 1.9 V - - 1.9 V 1.9 V
Minimum supply voltage (Vsup) 1.7 V 1.7 V - - 1.7 V 1.7 V
Nominal supply voltage (Vsup) 1.8 V 1.8 V - - 1.8 V 1.8 V
surface mount YES YES - - NO NO
technology CMOS CMOS - - CMOS CMOS
Temperature level OTHER OTHER - - OTHER OTHER
Terminal form BALL BALL - - NO LEAD NO LEAD
Terminal location BOTTOM BOTTOM - - DUAL DUAL
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