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IDT71B229S28Y8

Description
Cache SRAM, 32KX9, 28ns, BICMOS, PDSO32, 0.300 INCH, SOJ-32
Categorystorage    storage   
File Size221KB,8 Pages
ManufacturerIDT (Integrated Device Technology)
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IDT71B229S28Y8 Overview

Cache SRAM, 32KX9, 28ns, BICMOS, PDSO32, 0.300 INCH, SOJ-32

IDT71B229S28Y8 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeSOJ
package instruction0.300 INCH, SOJ-32
Contacts32
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time28 ns
Other features16K X 9 DUAL ARRAY FOR INSTRUCTION AND DATA
JESD-30 codeR-PDSO-J32
JESD-609 codee0
length20.96 mm
memory density294912 bit
Memory IC TypeCACHE SRAM
memory width9
Number of functions1
Number of ports1
Number of terminals32
word count32768 words
character code32000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize32KX9
Output characteristics3-STATE
ExportableYES
Package body materialPLASTIC/EPOXY
encapsulated codeSOJ
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
Certification statusNot Qualified
Maximum seat height3.76 mm
Maximum supply voltage (Vsup)5.25 V
Minimum supply voltage (Vsup)4.75 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyBICMOS
Temperature levelCOMMERCIAL
Terminal surfaceTIN LEAD
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperature30
width7.62 mm
Base Number Matches1

IDT71B229S28Y8 Related Products

IDT71B229S28Y8 IDT71B229S28Y IDT71B229S12Y IDT71B229S12Y8 IDT71B229S22Y8 IDT71B229S16Y IDT71B229S22Y IDT71B229S16Y8
Description Cache SRAM, 32KX9, 28ns, BICMOS, PDSO32, 0.300 INCH, SOJ-32 Cache SRAM, 32KX9, 28ns, BICMOS, PDSO32, 0.300 INCH, SOJ-32 Cache SRAM, 32KX9, 12ns, BICMOS, PDSO32, 0.300 INCH, SOJ-32 Cache SRAM, 32KX9, 12ns, BICMOS, PDSO32, 0.300 INCH, SOJ-32 Cache SRAM, 32KX9, 22ns, BICMOS, PDSO32, 0.300 INCH, SOJ-32 Cache SRAM, 32KX9, 16ns, BICMOS, PDSO32, 0.300 INCH, SOJ-32 Cache SRAM, 32KX9, 22ns, BICMOS, PDSO32, 0.300 INCH, SOJ-32 Cache SRAM, 32KX9, 16ns, BICMOS, PDSO32, 0.300 INCH, SOJ-32
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Parts packaging code SOJ SOJ SOJ SOJ SOJ SOJ SOJ SOJ
package instruction 0.300 INCH, SOJ-32 0.300 INCH, SOJ-32 0.300 INCH, SOJ-32 0.300 INCH, SOJ-32 0.300 INCH, SOJ-32 0.300 INCH, SOJ-32 0.300 INCH, SOJ-32 0.300 INCH, SOJ-32
Contacts 32 32 32 32 32 32 32 32
Reach Compliance Code compliant not_compliant not_compliant compliant compliant not_compliant not_compliant compliant
ECCN code EAR99 EAR99 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B
Maximum access time 28 ns 28 ns 12 ns 12 ns 22 ns 16 ns 22 ns 16 ns
Other features 16K X 9 DUAL ARRAY FOR INSTRUCTION AND DATA 16K X 9 DUAL ARRAY FOR INSTRUCTION AND DATA; ADDRESS LATCH 16K X 9 DUAL ARRAY FOR INSTRUCTION AND DATA; ADDRESS LATCH 16K X 9 DUAL ARRAY FOR INSTRUCTION AND DATA 16K X 9 DUAL ARRAY FOR INSTRUCTION AND DATA 16K X 9 DUAL ARRAY FOR INSTRUCTION AND DATA; ADDRESS LATCH 16K X 9 DUAL ARRAY FOR INSTRUCTION AND DATA; ADDRESS LATCH 16K X 9 DUAL ARRAY FOR INSTRUCTION AND DATA
JESD-30 code R-PDSO-J32 R-PDSO-J32 R-PDSO-J32 R-PDSO-J32 R-PDSO-J32 R-PDSO-J32 R-PDSO-J32 R-PDSO-J32
JESD-609 code e0 e0 e0 e0 e0 e0 e0 e0
length 20.96 mm 20.96 mm 20.96 mm 20.96 mm 20.96 mm 20.96 mm 20.96 mm 20.96 mm
memory density 294912 bit 294912 bit 294912 bit 294912 bit 294912 bit 294912 bit 294912 bit 294912 bit
Memory IC Type CACHE SRAM CACHE SRAM CACHE SRAM CACHE SRAM CACHE SRAM CACHE SRAM CACHE SRAM CACHE SRAM
memory width 9 9 9 9 9 9 9 9
Number of functions 1 1 1 1 1 1 1 1
Number of ports 1 1 1 1 1 1 1 1
Number of terminals 32 32 32 32 32 32 32 32
word count 32768 words 32768 words 32768 words 32768 words 32768 words 32768 words 32768 words 32768 words
character code 32000 32000 32000 32000 32000 32000 32000 32000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
organize 32KX9 32KX9 32KX9 32KX9 32KX9 32KX9 32KX9 32KX9
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Exportable YES YES YES YES YES YES YES YES
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code SOJ SOJ SOJ SOJ SOJ SOJ SOJ SOJ
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 3.76 mm 3.76 mm 3.76 mm 3.76 mm 3.76 mm 3.76 mm 3.76 mm 3.76 mm
Maximum supply voltage (Vsup) 5.25 V 5.25 V 5.25 V 5.25 V 5.25 V 5.25 V 5.25 V 5.25 V
Minimum supply voltage (Vsup) 4.75 V 4.75 V 4.75 V 4.75 V 4.75 V 4.75 V 4.75 V 4.75 V
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
surface mount YES YES YES YES YES YES YES YES
technology BICMOS BICMOS BICMOS BICMOS BICMOS BICMOS BICMOS BICMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal surface TIN LEAD Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) TIN LEAD TIN LEAD Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) TIN LEAD
Terminal form J BEND J BEND J BEND J BEND J BEND J BEND J BEND J BEND
Terminal pitch 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
width 7.62 mm 7.62 mm 7.62 mm 7.62 mm 7.62 mm 7.62 mm 7.62 mm 7.62 mm
Maker - - - IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology)
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