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IS62UT2568LL-100BI

Description
Standard SRAM, 256KX8, 100ns, CMOS, PBGA36, MINI, BGA-36
Categorystorage    storage   
File Size54KB,12 Pages
ManufacturerIntegrated Silicon Solution ( ISSI )
Download Datasheet Parametric View All

IS62UT2568LL-100BI Overview

Standard SRAM, 256KX8, 100ns, CMOS, PBGA36, MINI, BGA-36

IS62UT2568LL-100BI Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeBGA
package instructionMINI, BGA-36
Contacts36
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Maximum access time100 ns
JESD-30 codeR-PBGA-B36
JESD-609 codee0
memory density2097152 bit
Memory IC TypeSTANDARD SRAM
memory width8
Humidity sensitivity level3
Number of functions1
Number of terminals36
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize256KX8
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Package shapeRECTANGULAR
Package formGRID ARRAY
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)240
Certification statusNot Qualified
Maximum supply voltage (Vsup)2 V
Minimum supply voltage (Vsup)1.6 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formBALL
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
Base Number Matches1
ISSI
TARGET SPECIFICATION
IS62Ux2568 Series
256K x 8 LOW VOLTAGE, LOW POWER
CMOS STATIC RAM
FEATURES
• Voltage range options
-- 1.6V to 2.0V: IS62UT2568
-- 1.8V to 2.2V: IS62US2568
-- 2.3V to 2.7V: IS62UR2568
-- 2.7V to 3.3V: IS62UP2568
• Battery backup (SL/LL version)
-- 1.0V (min.) data retention
• Access times: 55, 70, and 100 ns
• Fully static operation and tri-state outputs
• Industrial temperature available
• Available in 36-ball mini BGA and 32-pin
sTSOP(I)
®
ADVANCE INFORMATION
JULY 1999
DESCRIPTION
The
ISSI
IS62Ux2568 series is a low voltage, 262,144
words by 8 bits, CMOS SRAM. It is fabricated using
ISSI
's
low voltage, six transistor (6T), CMOS technology. The
series is targeted to satisfy the demands of the state-of-
the-art technologies such as cell phones and pagers.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels. Additionally, easy
memory expansion is provided by using Chip Enable and
Output Enable inputs,
CE
and
OE
. The active LOW Write
Enable (
WE
) controls both writing and reading of the
memory.
The IS62Ux2568 series is packaged in a 36-ball mini BGA
and a 32-pin TSOP (I).
PRODUCT SERIES OVERVIEW
Part No.
IS62UP2568
IS62UP2568
(1)
IS62UR2568
IS62UR2568
(1)
IS62US2568
IS62US2568
(1)
IS62UT2568
IS62UT2568
(1)
Voltage (V)
3.0,
±0.3
3.0,
±0.3
2.5,
±0.2
2.5,
±0.2
2.0,
±0.2
2.0,
±0.2
1.8,
±0.2
1.8,
±0.2
Speeds (ns)
55, 70, 100
55, 70, 100
55, 70, 100
55, 70, 100
55, 70, 100
55, 70, 100
55, 70, 100
55, 70, 100
Active I
CC
(mA)
25 @ 70 ns
25 @ 70 ns
15 @ 70 ns
15 @ 70 ns
10 @ 70 ns
10 @ 70 ns
10 @ 70 ns
10 @ 70 ns
Standby Current (
µ
A)
LL
SL
10
10
10
10
10
10
10
10
2
2
2
2
2
2
2
2
Temperature (
°
C)
0 to 70
40 to 85
0 to 70
40 to 85
0 to 70
40 to 85
0 to 70
40 to 85
Note:
1. Current value is max.
This document is a TARGET SPECIFICATION only. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible
product. We assume no responsibility for any errors which may appear in this publication. © Copyright 1999, Integrated Silicon Solution, Inc.
2231 Lawson Lane • Santa Clara, CA 95054-3311 • 1-800-379-4774 • Fax: (408) 588-0806
e-mail: sales@issi.com •
www.issi.com
Integrated Silicon Solution, Inc. — 1-800-379-4774
TARGET SPECIFICAITON
Rev. 00TB
07/16/99
1
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