IRFS41N15DPBF datasheet, PDF - EEWORLD Datasheet

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IRFS41N15DPBF: Description41 A, 150 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET; CategoryDiscrete semiconductor The transistor; File Size337KB，13 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

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IRFS41N15DPBF Overview

41 A, 150 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET

IRFS41N15DPBF Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
package instruction	LEAD FREE, D2PAK-3
Contacts	3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	470 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	150 V
Maximum drain current (Abs) (ID)	41 A
Maximum drain current (ID)	41 A
Maximum drain-source on-resistance	0.045 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	200 W
Maximum pulsed drain current (IDM)	164 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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PD - 94927A

Applications

IRFB41N15DPbF

IRFIB41N15DPbF

IRFS41N15DPbF

IRFSL41N15DPbF

HEXFET

Power MOSFET

High frequency DC-DC converters

Lead-Free

DSS

DS(on)

max

150V

0.045

41A

Benefits

Low Gate-to-Drain Charge to Reduce

Switching Losses

Fully Characterized Capacitance Including

Effective C

OSS

to Simplify Design, (See

App. Note AN1001)

Fully Characterized Avalanche Voltage

and Current

TO-220AB TO-220 FullPak

Pak

TO-262

IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D

Absolute Maximum Ratings

Parameter

@ T

= 25°C

Continuous Drain Current, V

@ 10V

Pulsed Drain Current

@ T

= 100°C Continuous Drain Current, V

@ 10V

Max.

164

3.1

200

1.3

0.32

± 30

2.7

-55 to + 175

Units

Power Dissipation, D Pak

Power Dissipation, TO-220

Power Dissipation, Fullpak

Linear Derating Factor, TO-220

Linear Derating Factor, Fullpak

W/°C

V/ns

°C

dv/dt

STG

Gate-to-Source Voltage

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

300 (1.6mm from case )

1.1(10)

N•m (lbf•in)

Thermal Resistance

Parameter

θJC

θcs

θJA

Junction-to-Case

Junction-to-Case, Fullpak

Case-to-Sink, Flat, Greased Surface

Typ.

–––

0.50

–––

Max.

0.75

3.14

–––

Units

°C/W

Junction-to-Ambient, D Pak

Junction-to-Ambient, TO-220

Junction-to-Ambient, Fullpak

Notes

through

are on page 12

www.irf.com

08/10/06

IRFS41N15DPBF Related Products

	IRFS41N15DPBF	IRFB41N15DPBF	IRFIB41N15DPBF	IRFSL41N15DPBF
Description	41 A, 150 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET	41 A, 150 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	41 A, 150 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	41 A, 150 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET
Is it Rohs certified?	conform to	conform to	conform to	conform to
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
package instruction	LEAD FREE, D2PAK-3	LEAD FREE PACKAGE-3	LEAD FREE, TO-220, FULLPAK-3	LEAD FREE, TO-262, 3 PIN
Contacts	3	3	3	3
Reach Compliance Code	not_compliant	unknow	unknow	_compli
ECCN code	EAR99	EAR99	EAR99	EAR99
Other features	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	470 mJ	470 mJ	470 mJ	470 mJ
Shell connection	DRAIN	DRAIN	ISOLATED	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	150 V	150 V	150 V	150 V
Maximum drain current (Abs) (ID)	41 A	41 A	41 A	41 A
Maximum drain current (ID)	41 A	41 A	41 A	41 A
Maximum drain-source on-resistance	0.045 Ω	0.045 Ω	0.045 Ω	0.045 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2	R-PSFM-T3	R-PSFM-T3	R-PSIP-T3
JESD-609 code	e3	e3	e3	e3
Number of components	1	1	1	1
Number of terminals	2	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	FLANGE MOUNT	FLANGE MOUNT	IN-LINE
Peak Reflow Temperature (Celsius)	260	250	260	260
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	200 W	200 W	48 W	200 W
Maximum pulsed drain current (IDM)	164 A	164 A	164 A	164 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	NO	NO	NO
Terminal surface	Matte Tin (Sn) - with Nickel (Ni) barrier	Matte Tin (Sn) - with Nickel (Ni) barrie	Matte Tin (Sn) - with Nickel (Ni) barrie	Matte Tin (Sn) - with Nickel (Ni) barrie
Terminal form	GULL WING	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	30	30	40	30
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Is it lead-free?	Lead free	Lead free	Lead free	-
Parts packaging code	-	TO-220AB	TO-220AB	TO-262AA
JEDEC-95 code	-	TO-220AB	TO-220AB	TO-262AA

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