Bulletin I27191 02/05
50MT060ULSA
50MT060ULSTA
"LOW SIDE CHOPPER" IGBT MTP
Features
• Gen. 4 Ultrafast Speed IGBT Technology
• HEXFRED
TM
Diode with UltraSoft
Reverse Recovery
• Very Low Conduction and Switching
Losses
• Optional SMD Thermistor (NTC)
• Al
2
O
3
DBC
• Very Low Stray Inductance Design for
High Speed Operation
• UL approved ( file E78996 )
Ultrafast Speed IGBT
V
CES
= 600V
I
C
= 100A,
T
C
= 25°C
Benefits
• Optimized for Welding, UPS and SMPS
Applications
• Operating Frequencies > 20 kHz Hard
Switching, >200 kHz Resonant Mode
• Low EMI, requires Less Snubbing
• Direct Mounting to Heatsink
• PCB Solderable Terminals
• Very Low Junction-to-Case Thermal
Resistance
MMTP
Absolute Maximum Ratings
Parameters
V
CES
I
C
I
CM
I
LM
I
F
Max
600
@ T
C
= 25°C
@ T
C
= 122°C
100
50
200
200
@ T
C
= 100°C
48
200
± 20
2500
445
175
205
83
IGBT
Diode
@ T
C
= 25°C
@ T
C
= 100°C
@ T
C
= 25°C
@ T
C
= 100°C
Units
V
A
Collector-to-Emitter Voltage
Continuos Collector Current
Pulsed Collector Current
Peak Switching Current
Diode Continuous Forward Current
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Maximum Power
Dissipation
I
FM
V
GE
V
ISOL
P
D
V
W
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1
50MT060ULSA, 50MT060ULSTA
Bulletin I27191 02/05
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
V
(BR)CES
V
CE(on)
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Voltage
Min Typ Max Units Test Conditions
600
1.69
1.96
1.88
2.31
2.55
2.24
6
- 13
22
29
0.25
1.64
1.56
6
1.82
1.74
± 250
nA
V
V
GE
= 0V, I
C
= 250µA
V
GE
= 15V, I
C
= 50A
V
GE
= 15V, I
C
= 100A
V
GE
= 15V, I
C
= 100A, T
J
= 150°C
I
C
= 0.5mA
I
R
= 200µA
mV/°C V
CE
= V
GE
, I
C
= 500µA
S
mA
V
V
CE
= 50V, I
C
= 100A
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
I
F
= 100A, V
GE
= 0V
I
F
= 100A, V
GE
= 0V, T
J
= 150°C
V
GE
= ± 20V
V
GE(th)
B
VR
Gate Threshold Voltage
Diode Reverse Breakdown Voltage
3
600
∆V
GE(th)
/ Temperature Coeff. of
∆T
J
Threshold Voltage
g
fe
I
CES
V
FM
I
GES
Forward Transconductance
Collector-to-Emiter Leaking Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
Q
g
Q
ge
Q
gc
E
on
E
off
E
ts
E
on
E
off
E
ts
C
ies
C
oes
C
res
C
t
trr
Irr
Total Gate Charge (turn-on)
Gate-Emitter Charge (turn-on)
Gate-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Junction Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Current
Min Typ Max Units Test Conditions
370
64
163
0.7
1.7
2.4
1.1
2.5
3.6
555
96
245
1.2
2.6
3.8
1.7
3.8
5.5
nC
I
C
= 100A
V
CC
= 480V
V
GE
= 15V
I
C
= 50A, V
CC
= 480V, V
GE
= 15V,
R
g
= 5Ω
Energy losses include tail and diode reverse
recovery
mJ
mJ
I
C
= 50A, V
CC
= 480V, V
GE
= 15V
R
g
= 5Ω, T
J
= 125°C
Energy losses include tail and diode reverse
recovery
9800 14700
602
121
118
99
6.5
320
236
903
182
177
150
9.8
735
ns
A
pF
V
GE
= 0V
V
CC
= 30V
f = 1.0 MHz
V
r
= 600V, f = 1.0 MHz
V
CC
= 480V, I
C
= 50A
di/dt = 200A/µs
Qrr
Diode Recovery Charge
di
(rec)
M/
dt
Diode PeakRate of Fall of Recovery
During t
b
nC R
g
= 5Ω
A/µs
2
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50MT060ULSA, 50MT060ULSTA
Bulletin I27191 02/05
Thermistor Specifications (50MT060ULSTA only)
Parameters
R
0
β
(1)
(1) (2)
Min Typ
30
4000
R
0
R
1
Max Units Test Conditions
kΩ
K
T
0
= 25°C
T
0
= 25°C
T
1
= 85°C
Temperatures in kelvin
Resistance
Sensitivity index of the thermistor
material
(2)
(1)
T
0
,T
1
are thermistor's temperatures
= exp
[
β
(
1
T
1
0
T
1
)]
,
Thermal- Mechanical Specifications
Parameters
T
J
T
STG
R
thJC
R
thCS
T
Wt
Operating Junction Temperature Range
Storage Temperature Range
Junction-to-Case
Case-to-Sink
Mounting torque to heatsink
Weight
compound. Lubricated threads
Min
- 40
- 40
IGBT
Diode
Module
(3)
Typ
Max
150
125
0.28
0.6
Units
°C
°C/ W
0.06
3 ± 10%
66
Nm
g
(Heatsink Compound Thermal Conductivity = 1 W/mK)
(3) A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the
100
75
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C
Power Dissipation = 92W
Load Current ( A )
50
25
0
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
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50MT060ULSA, 50MT060ULSTA
Bulletin I27191 02/05
100
T
J
= 150C
1000.0
IC, Collector-to-Emitter Current
(Α)
I
C
, Collector-to-Emitter Current (A)
T J = 150°C
100.0
T
J
= 25C
10
T J = 25°C
10.0
Vge = 15V
380
µ
s Pulse Width
1
0.6
1.0
1.4
1.8
2.2
1.0
5.0
5.5
VCC = 50V
20µs PULSE WIDTH
6.0
6.5
V
CE
, Collector-to-Emitter Voltage (V)
VGE, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
120
IC Maximum DC Collector Current (A)
VCE , Collector-to Emitter Voltage (V)
2
100
80
60
40
20
0
25
50
75
100
125
150
TC Case Temperature (°C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
IC = 100A
1.75
IC = 50A
1.5
1.25
IC = 25A
1
20
40
60
80
100
120
140
160
T J , Junction Temperature (°C)
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
4
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50MT060ULSA, 50MT060ULSTA
Bulletin I27191 02/05
1
D = 0.50
Thermal Response ( Z thJC )
0.1
0.01
0.20
0.10
0.05
0.01
0.02
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
C
τ
τ
3
Ri (°C/W)
0.060
0.130
0.100
τi
(sec)
0.000968
0.019621
0.051755
0.001
τ
1
τ
2
τ
3
Ci=
τi/Ri
Ci i/Ri
0.0001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 6a
Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1
D = 0.50
Thermal Response ( Z thJC )
0.1
0.20
0.10
0.05
0.01
0.01
0.02
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
C
τ
τ
3
Ri (°C/W)
0.200
0.296
0.102
τi
(sec)
0.000993
0.038934
0.52648
τ
1
τ
2
τ
3
0.001
Ci=
τi/Ri
Ci i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 6b
Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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